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Li et al., 2002 - Google Patents

Ge-doped SiO2 thin films produced by helicon activated reactive evaporation

Li et al., 2002

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Document ID
3230937174445292591
Author
Li W
Bulla D
Charles C
Boswell R
Love J
Luther-Davies B
Publication year
Publication venue
Thin Solid Films

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Snippet

Ge-doped SiO2 thin films for optical waveguide application were produced at low temperature by using an improved helicon plasma assisted reactive evaporation technique. Pure Si and Ge materials were simultaneously evaporated from two separated crucibles by …
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods

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