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Yoon et al., 1997 - Google Patents

Low temperature metal induced crystallization of amorphous silicon using a Ni solution

Yoon et al., 1997

Document ID
3192072449001063206
Author
Yoon S
Kim K
Kim C
Oh J
Jang J
Publication year
Publication venue
Journal of applied physics

External Links

Snippet

Amorphous silicon a-Si was crystallized by metal-induced crystallization MIC using a Ni standard absorption solution. The a-Si films spin-coated with a 5000 ppm Ni solution were crystallized at as low as 500 C. Needlelike morphology, developed as a result of the …
Continue reading at pubs.aip.org (other versions)

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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