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Lv et al., 2020 - Google Patents

Lateral β-Ga 2 O 3 MOSFETs with high power figure of merit of 277 MW/cm 2

Lv et al., 2020

Document ID
318501312579257453
Author
Lv Y
Liu H
Zhou X
Wang Y
Song X
Cai Y
Yan Q
Wang C
Liang S
Zhang J
Feng Z
Zhou H
Cai S
Hao Y
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

In this work, we have demonstrated highperformance lateral β-Ga 2 O 3 metal-oxide- semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P- FOM) and breakdown voltage (BV) by adopting a T-shape gate field-plate and source …
Continue reading at ieeexplore.ieee.org (other versions)

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