Nothing Special   »   [go: up one dir, main page]

Gashi et al., 2018 - Google Patents

Investigations of active antenna Doherty power amplifier modules under beam-steering mismatch

Gashi et al., 2018

View PDF
Document ID
313926882360859220
Author
Gashi B
Krause S
Quay R
Fager C
Ambacher O
Publication year
Publication venue
IEEE Microwave and Wireless Components Letters

External Links

Snippet

This letter investigates the performance of a Doherty power amplifier (DPA) in an 8× 1 active antenna transmitter module under an average voltage-standing-wave ratio of 4: 1 induced by the array 1-D beam steering and mutual coupling. The GaN-based DPA and a 2× 1 …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q9/00—Electrically-short aerials having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant aerials
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna

Similar Documents

Publication Publication Date Title
Suijker et al. Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku-and Ka-band space applications
Di Giacomo-Brunel et al. Industrial 0.15-μm AlGaN/GaN on SiC technology for applications up to Ka band
Fager et al. Analysis of nonlinear distortion in phased array transmitters
Gashi et al. Investigations of active antenna Doherty power amplifier modules under beam-steering mismatch
US11843352B2 (en) Inverted Doherty power amplifier with large RF and instantaneous bandwidths
Gassmann et al. Wideband, high-efficiency GaN power amplifiers utilizing a non-uniform distributed topology
van Heijningen et al. C-band single-chip radar front-end in AlGaN/GaN technology
Griffith et al. A compact 140-GHz, 150-mW high-gain power amplifier MMIC in 250-nm InP HBT
Dennler et al. 8–42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology
Ćwikliński et al. Full W-band GaN power amplifier MMICs using a novel type of broadband radial stub
Quaglia et al. Mitigation of load mismatch effects using an orthogonal load modulated balanced amplifier
Preis et al. Investigation of class-B/J continuous modes in broadband GaN power amplifiers
Sardin et al. X-band 10W MMIC high-gain power amplifier with up to 60% PAE
Van Raay et al. A coplanar X-band AlGaN/GaN power amplifier MMIC on si SiC substrate
Quaglia et al. Source/load-pull characterisation of GaN on Si HEMTs with data analysis targeting Doherty design
Longhi et al. 32–36-GHz Single-Chip Front-End MMIC Featuring 35-dBm Output Power and 3.2-dB Noise Figure With 60-and 100-nm GaN/Si HEMTs
Gonzalez-Garrido et al. 2-6 GHz GaN MMIC power amplifiers for electronic warfare applications
Friesicke et al. A linear 4W power amplifier at K-band using 250nm AlGaN/GaN HEMTs
Van Heijningen et al. Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
Costanzo et al. A q-band mmic power amplifier in gan on si technology for space applications
Ćwikliński et al. First full W-band GaN power amplifier MMICs with novel broadband radial stubs and 50 GHz of bandwidth
Schwantuschke et al. GaN-based Power Amplifier MMIC and Module for D-Band Applications
Fan et al. Antenna array driven by non-isolated power amplifiers for MIMO applications
Fakhfakh et al. Broadband 8 W Ka-band MMIC power amplifier using 100 nm GaN technology
Abounemra et al. A 1.5 KW L-Band All GaN High-Efficiency Solid State Power Amplifier for Pulsed Applications