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Patil et al., 2001 - Google Patents

Low temperature silicon nitride deposited by Cat-CVD for deep sub-micron metal–oxide–semiconductor devices

Patil et al., 2001

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Document ID
3110464550891391082
Author
Patil S
Kumbhar A
Waghmare P
Rao V
Dusane R
Publication year
Publication venue
Thin Solid Films

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Snippet

Silicon nitride as a gate dielectric can improve the performance of ULSI CMOS devices by decreasing the gate leakage currents. In this paper we report a a-SiN: H gate dielectric fabricated using Cat-CVD at a relatively low substrate temperature of∼ 250° C, using silane …
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