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Cariou et al., 2012 - Google Patents

Silicon epitaxy below 200 C: Towards thin crystalline solar cells

Cariou et al., 2012

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Document ID
2590585452008905599
Author
Cariou R
Ruggeri R
Chatterjee P
Gentner J
i Cabarrocas P
Publication year
Publication venue
Thin Film Solar Technology IV

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Snippet

Low temperature plasma processes provide a toolbox for etching, texturing and deposition of a wide range of materials. Here we present a bottom up approach to grow epitaxial crystalline silicon films (epi-Si) by standard RFPECVD at temperatures below 200° C. Booth …
Continue reading at polytechnique.hal.science (PDF) (other versions)

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