Nothing Special   »   [go: up one dir, main page]

Ma et al., 2022 - Google Patents

A 35 dBm P SAT and 41% PAE GaAs power amplifier with series distributed-balun

Ma et al., 2022

Document ID
259629632383669503
Author
Ma Z
Ma Z
Ma K
Publication year
Publication venue
IEEE Transactions on Circuits and Systems II: Express Briefs

External Links

Snippet

This brief presents a high-power Sub-6 GHz two-way differential power amplifier (PA) with a series distributed-balun output network in GaAs pHEMT process. The proposed series distributed-balun output network consists of two coupled-line-based distributed-baluns …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0294—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using vector summing of two or more constant amplitude phase-modulated signals
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3252—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using multiple parallel paths between input and output
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports

Similar Documents

Publication Publication Date Title
Cao et al. Continuous-mode hybrid asymmetrical load-modulated balanced amplifier with three-way modulation and multi-band reconfigurability
Nikandish et al. Bandwidth enhancement of GaN MMIC Doherty power amplifiers using broadband transformer-based load modulation network
Zong et al. A 28-GHz SOI-CMOS Doherty power amplifier with a compact transformer-based output combiner
Van Der Heijden et al. A 19W high-efficiency wide-band CMOS-GaN class-E Chireix RF outphasing power amplifier
Wang et al. A high-power broadband multi-primary DAT-based Doherty power amplifier for mm-wave 5G applications
Lv et al. A compact Ka/Q dual-band GaAs MMIC Doherty power amplifier with simplified offset lines for 5G applications
Yu et al. A 28-GHz Doherty power amplifier with a compact transformer-based quadrature hybrid in 65-nm CMOS
Son et al. Pole-controlled wideband 120 GHz CMOS power amplifier for wireless chip-to-chip communication in 40-nm CMOS process
Nikandish et al. Design of highly linear broadband continuous mode GaN MMIC power amplifiers for 5G
Ma et al. A 35 dBm P SAT and 41% PAE GaAs power amplifier with series distributed-balun
Jundi et al. An 85-W multi-octave push–pull GaN HEMT power amplifier for high-efficiency communication applications at microwave frequencies
Zhang et al. A millimeter-wave three-way Doherty power amplifier for 5G NR OFDM
Nguyen et al. A coupler-based differential Doherty power amplifier with built-in baluns for high mm-wave linear-yet-efficient Gbit/s amplifications
Mannem et al. Broadband active load-modulation power amplification using coupled-line baluns: A multifrequency role-exchange coupler Doherty amplifier architecture
Li et al. A 110-to-130 ghz sige bicmos doherty power amplifier with a slotline-based power combiner
Zhou et al. Broadband highly efficient Doherty power amplifiers
Nikandish et al. A broadband fully integrated power amplifier using waveform shaping multi-resonance harmonic matching network
Maktoomi et al. A wideband isolated real-to-complex impedance transforming uniplanar microstrip line balun for push–pull power amplifier
Cho et al. Ka-band CMOS power amplifier based on transmission line transformers with single-ended Doherty network
Liu et al. A 44–64-GHz mmWave broadband linear Doherty PA in silicon with quadrature hybrid combiner and non-foster impedance tuner
Zhai et al. Dual-mode CMOS RF power amplifier design using a novel reconfigurable single-switch single-inductor balun
Ryu et al. High‐Efficiency CMOS Power Amplifier Using Uneven Bias for Wireless LAN Application
Chen et al. A 40-GHz load modulated balanced power amplifier using unequal power splitter and phase compensation network in 45-nm SOI CMOS
Lv et al. A fully integrated 3.5-/4.9-GHz dual-band GaN MMIC Doherty power amplifier based on multi-resonant circuits
Tsai et al. A linear and efficient power amplifier supporting wideband 64-QAM for 5G applications from 26 to 30 GHz in SiGe: C BiCMOS