Nothing Special   »   [go: up one dir, main page]

Urbanowicz et al., 2009 - Google Patents

Effect of porogen residue on chemical, optical, and mechanical properties of CVD SiCOH low-k materials

Urbanowicz et al., 2009

View PDF
Document ID
2583051043725073897
Author
Urbanowicz A
Vanstreels K
Shamiryan D
De Gendt S
Baklanov M
Publication year
Publication venue
Electrochemical and Solid-State Letters

External Links

Snippet

The effect of downstream plasma on chemical vapor deposition (CVD) low-films with different porosities was studied. The results show that this plasma does not reduce the concentration of bonds in the low-matrix and that the films remain hydrophobic. However …
Continue reading at citeseerx.ist.psu.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

Similar Documents

Publication Publication Date Title
Urbanowicz et al. Effect of porogen residue on chemical, optical, and mechanical properties of CVD SiCOH low-k materials
Rafí et al. Deposition temperature and thermal annealing effects on the electrical characteristics of atomic layer deposited Al2O3 films on silicon
Rakhimova et al. Interaction of F atoms with SiOCH ultra-low-k films: I. Fluorination and damage
Tu et al. Low-k SiCxNy films prepared by plasma-enhanced chemical vapor deposition using 1, 3, 5-trimethyl-1, 3, 5-trivinylcyclotrisilazane precursor
Wang et al. Room-temperature direct bonding using fluorine containing plasma activation
Urbanowicz et al. Damage reduction and sealing of low-k films by combined He and NH3 plasma treatment
Eslava et al. Optical property changes in low-k films upon ultraviolet-assisted curing
Armini et al. Pore sealing of porous ultralow-k dielectrics by self-assembled monolayers combined with atomic layer deposition
Hikavyy et al. Investigation of Cl2 etch in view of extremely low temperature selective epitaxial processes
Khatami et al. Process-dependent mechanical and optical properties of nanostructured silicon carbonitride thin films
Kim et al. Effects of chamber wall conditions on Cl concentration and Si etch rate uniformity in plasma etching reactors
Tada et al. Chemical structure effects of ring-type siloxane precursors on properties of plasma-polymerized porous SiOCH films
Grill et al. The effect of plasma chemistry on the damage induced to porous SiCOH dielectrics
Karahashi et al. Etching yields and surface reactions of amorphous carbon by fluorocarbon ion irradiation
Urbanowicz et al. Effects of He plasma pretreatment on low-k damage during Cu surface cleaning with NH3 plasma
Moore et al. Damage of low-k and ultralow-k dielectrics from reductive plasma discharges used for photoresist removal
Zotovich et al. Low-k protection from F radicals and VUV photons using a multilayer pore grafting approach
Kubasch et al. Investigation of Argon Plasma Damage on Ultra Low-κ Dielectrics
Olawumi et al. Modification of Ultra Low-k Dielectric Films by O2 and CO2 Plasmas
Oh et al. Long-term stability of SiNx thin-film barriers deposited by low temperature PECVD for OLED
Van Elshocht et al. Bulk properties of MOCVD-deposited HfO2 layers for high k dielectric applications
Van Hoornick et al. Evaluation of atomic layer deposited NbN and NbSiN as metal gate materials
Lopaev et al. Effect of H atoms and UV wideband radiation on cured low-k OSG films
Chen et al. Plasma impacts to an O-SiC low-k barrier film
Semenova et al. Mechanical strains in pecvd SiNx: H films for nanophotonic application