Bayer et al., 2009 - Google Patents
Material analysis with EUV/XUV radiation using a broadband laser plasma source and optics systemBayer et al., 2009
View PDF- Document ID
- 248092476006614323
- Author
- Bayer A
- Barkusky F
- Dette J
- Döring S
- Flöter B
- Peth C
- Mann K
- Publication year
- Publication venue
- EUV and X-Ray Optics: Synergy between Laboratory and Space
External Links
Snippet
Triggered by the roadmap of the semiconductor industry, tremendous progress has been achieved in the development of Extreme Ultraviolet (EUV) sources and high-quality EUV optical coatings in recent years, opening up also new fields of applications apart from …
- 210000002381 Plasma 0 title abstract description 30
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
- G03F7/708—Construction of apparatus, e.g. environment, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
- G03F7/708—Construction of apparatus, e.g. environment, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution, removing pollutants from apparatus; electromagnetic and electrostatic-charge pollution
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
- G03F7/70008—Production of exposure light, i.e. light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
- G03F7/70483—Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control, in all parts of the microlithographic apparatus, e.g. pulse length control, light interruption
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionizing radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionizing radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K7/00—Gamma- or X-ray microscopes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2004282046A (en) | Method and apparatus for measuring contamination on surfaces of constituent components of lithographic apparatus | |
JP2006332654A5 (en) | ||
US20230296533A1 (en) | Inspection apparatus and inspection method | |
US9632419B2 (en) | Radiation source | |
US11615897B2 (en) | Microscopic system for testing structures and defects on EUV lithography photomasks | |
KR101790074B1 (en) | Radiation source, lithographic apparatus and device manufacturing method | |
Barkusky et al. | Direct photo-etching of poly (methyl methacrylate) using focused extreme ultraviolet radiation from a table-top laser-induced plasma source | |
TWI510821B (en) | Spectral purity filter | |
US20050211910A1 (en) | Morphology and Spectroscopy of Nanoscale Regions using X-Rays Generated by Laser Produced Plasma | |
Barkusky et al. | Formation and direct writing of color centers in LiF using a laser-induced extreme ultraviolet plasma in combination with a Schwarzschild objective | |
Bayer et al. | Material analysis with EUV/XUV radiation using a broadband laser plasma source and optics system | |
Louis et al. | Damage studies of multilayer optics for XUV free electron lasers | |
JP2010045355A (en) | Radiation source, lithography apparatus and device manufacturing method | |
US6847463B2 (en) | Method and apparatus for detecting the presence and thickness of carbon and oxide layers on EUV reflective surfaces | |
Bayer et al. | Applications of Compact Laser‐Driven EUV/XUV Plasma Sources | |
JP6053084B1 (en) | Mask inspection apparatus and mask inspection method | |
KR20230110738A (en) | Instrumentation device and related method based on higher order harmonic generation | |
Bayer et al. | Compact EUV source and optics for applications apart from lithography | |
Barkusky et al. | Direct photo-etching of PMMA by focused EUV radiation from a compact laser plasma source | |
Bajt et al. | Multilayers for next-generation x-ray sources | |
Bayer et al. | Active beam control for the EUV/XUV spectral range using an adaptive Kirkpatrick-Baez arrangement | |
Barkusky et al. | Applications of compact laser-driven EUV/XUV plasma sources | |
Banyay et al. | XUV metrology: surface analysis with extreme ultraviolet radiation | |
Bayer et al. | Compact EUV source and optics for direct structuring of surfaces | |
Barkusky et al. | Compact EUV source and Schwarzschild objective for modification and ablation of various materials |