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Patowary et al., 2020 - Google Patents

Fabrication and electrical characterization of organic field-effect transistor based on CSA doped PANi-Ta 2 O 5 nanocomposite

Patowary et al., 2020

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Document ID
2117070983918079718
Author
Patowary B
Laskar S
Sahu P
Narzary R
Publication year
Publication venue
ADBU Journal of Engineering Technology (AJET)

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Snippet

Top-contact, bottom-gate organic field-effect transistors (OFETs) based on Polyaniline (PANi)-Tantalum Pentoxide (Ta2O5) nanocomposite doped with Camphor Sulphonic Acid (CSA) as the active semiconductor layer and Poly Methyl Methacrylate (PMMA) as the gate …
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    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0516—Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric
    • H01L51/052—Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric the gate dielectric comprising only organic materials
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    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0541—Lateral single gate single channel transistors with non inverted structure, i.e. the organic semiconductor layer is formed before the gate electode
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    • H01L51/0508—Field-effect devices, e.g. TFTs
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    • H01L51/0529—Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric the gate dielectric having a multilayered structure
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