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Jiang et al., 2006 - Google Patents

AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

Jiang et al., 2006

Document ID
1863371370238196022
Author
Jiang H
Egawa T
Ishikawa H
Publication year
Publication venue
IEEE photonics technology letters

External Links

Snippet

Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2 times10-10 A/cm 2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm …
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