Kleinfelder et al., 2001 - Google Patents
A 10000 frames/s CMOS digital pixel sensorKleinfelder et al., 2001
View PDF- Document ID
- 18293010409927890563
- Author
- Kleinfelder S
- Lim S
- Liu X
- El Gamal A
- Publication year
- Publication venue
- IEEE Journal of Solid-State Circuits
External Links
Snippet
A 352/spl times/288 pixel CMOS image sensor chip with per-pixel single-slope ADC and dynamic memory in a standard digital 0.18-/spl mu/m CMOS process is described. The chip performs" snapshot" image acquisition, parallel 8-bit A/D conversion, and digital readout at …
- 238000006243 chemical reaction 0 abstract description 35
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/369—SSIS architecture; Circuitry associated therewith
- H04N5/378—Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/369—SSIS architecture; Circuitry associated therewith
- H04N5/374—Addressed sensors, e.g. MOS or CMOS sensors
- H04N5/3745—Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/357—Noise processing, e.g. detecting, correcting, reducing or removing noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems
- H04N3/10—Scanning details of television systems by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/351—Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
- H04N5/355—Control of the dynamic range
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/222—Studio circuitry; Studio devices; Studio equipment; Cameras comprising an electronic image sensor, e.g. digital cameras, video cameras, TV cameras, video cameras, camcorders, webcams, camera modules for embedding in other devices, e.g. mobile phones, computers or vehicles
- H04N5/225—Television cameras; Cameras comprising an electronic image sensor, e.g. digital cameras, video cameras, video cameras, camcorders, webcams, camera modules for embedding in other devices, e.g. mobile phones, computers or vehicles
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/33—Transforming infra-red radiation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Kleinfelder et al. | A 10000 frames/s CMOS digital pixel sensor | |
US10547802B2 (en) | Solid-state image pickup device and control method therefor, and electronic apparatus | |
Stoppa et al. | Novel CMOS image sensor with a 132-dB dynamic range | |
US7924332B2 (en) | Current/voltage mode image sensor with switchless active pixels | |
Yang et al. | A Nyquist-rate pixel-level ADC for CMOS image sensors | |
CN110753192B (en) | Integrated circuit image sensor | |
US20180103216A1 (en) | Solid-state image pickup device and control method therefor, and electronic apparatus | |
Seo et al. | A low noise wide dynamic range CMOS image sensor with low-noise transistors and 17b column-parallel ADCs | |
CN102238344A (en) | Solid-state imaging device, drive method thereof and camera system | |
Yeh et al. | A 0.66 e rms− Temporal-Readout-Noise 3-D-Stacked CMOS Image Sensor With Conditional Correlated Multiple Sampling Technique | |
JP2001339643A (en) | Black level generating circuit for solid-state image pickup device and solid-state image pickup device | |
KR20070064894A (en) | Image sensor, and test system and test method for the same | |
Kłosowski et al. | A CMOS pixel with embedded ADC, digital CDS and gain correction capability for massively parallel imaging array | |
Wany et al. | CMOS image sensor with NMOS-only global shutter and enhanced responsivity | |
Luo et al. | A 30-fps 192× 192 CMOS image sensor with per-frame spatial-temporal coded exposure for compressive focal-stack depth sensing | |
Gruev et al. | Linear current mode imager with low fix pattern noise | |
Yamada et al. | A 140dB-dynamic-range MOS image sensor with in-pixel multiple-exposure synthesis | |
McIlrath et al. | Design and analysis of a 512/spl times/768 current-mediated active pixel array image sensor | |
Loose et al. | The SIDECAR ASIC: focal plane electronics on a single chip | |
Burns et al. | Object location and centroiding techniques with CMOS active pixel sensors | |
Konnik et al. | On numerical simulation of high-speed CCD/CMOS-based wavefront sensors in adaptive optics | |
Woo et al. | Novel current-mode background suppression for 2-D LWIR applications | |
Ceylan et al. | Digital readout integrated circuit (DROIC) implementing time delay and integration (TDI) for scanning type infrared focal plane arrays (IRFPAs) | |
Liu | CMOS image sensors dynamic range and SNR enhancement via statistical signal processing | |
Tanner et al. | Low-power digital image sensor for still-picture image acquisition |