Lee et al., 1990 - Google Patents
Epitaxially grown sputtered LaAlO3 filmsLee et al., 1990
- Document ID
- 18124769690091519503
- Author
- Lee A
- Platt C
- Burch J
- Simon R
- Goral J
- Al‐Jassim M
- Publication year
- Publication venue
- Applied Physics Letters
External Links
Snippet
We have grown crystalline thin films of LaAlO3 using off‐axis rf sputtering from a single stoichiometric target. The films grow epitaxially on SrTiO3 and LaAlO3 (100) substrates as well as on YBa2Cu3O7 thin films. We report on the growth conditions used to make these …
- 229910002244 LaAlO3 0 title abstract 5
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
- H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
- H01L39/2422—Processes for depositing or forming superconductor layers
- H01L39/2454—Processes for depositing or forming superconductor layers characterised by the substrate
- H01L39/2461—Intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/22—Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
- H01L39/223—Josephson-effect devices
- H01L39/225—Josephson-effect devices comprising high Tc ceramic materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
- H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
- H01L39/2464—After-treatment, e.g. patterning
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/02—Details
- H01L39/12—Details characterised by the material
- H01L39/125—Ceramic materials
- H01L39/126—Ceramic materials comprising copper oxide
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/14—Permanent superconductor devices
- H01L39/145—Three or more electrode devices
- H01L39/146—Field effect devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/703—Microelectronic device with superconducting conduction line
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/704—Wire, fiber, or cable
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/842—Measuring and testing
- Y10S505/843—Electrical
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/775—High tc, above 30 k, superconducting material
- Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
- Y10S505/777—Lanthanum, e.g. La2Cu04
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/18—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components exhibiting superconductivity
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Lee et al. | Epitaxially grown sputtered LaAlO3 films | |
Wu et al. | High current YBa2Cu3O7− δ thick films on flexible nickel substrates with textured buffer layers | |
US5087605A (en) | Layered lattice-matched superconducting device and method of making | |
Akoh et al. | Anisotropic Josephson junctions of Y‐Ba‐Cu‐O/Au/Nb film sandwiches | |
US8032196B2 (en) | Josephson device, method of forming Josephson device and superconductor circuit | |
Kang et al. | Growth of superconducting MgB2 thin films via postannealing techniques | |
US8055318B1 (en) | Superconducting integrated circuit technology using iron-arsenic compounds | |
Pavlov et al. | Fabrication of high-temperature quasi-two-dimensional superconductors at the interface of a ferroelectric Ba 0.8 Sr 0.2 TiO 3 film and an insulating parent compound of La 2 CuO 4 | |
US5627139A (en) | High-temperature superconducting josephson devices having a barrier layer of a doped, cubic crystalline, conductive oxide material | |
Beasley | High-temperature superconductive thin films | |
Selvamanickam | High temperature superconductor (HTS) wires and tapes | |
Wang et al. | YBa $ _2 $ Cu $ _3 $ O $ _ {7-\delta} $-CeO $ _2 $-YBa $ _2 $ Cu $ _3 $ O $ _ {7-\delta} $ Multilayers Grown by Reactive Co-Evaporation on Sapphire Wafers | |
Yoshida et al. | Jc Characteristics in high magnetic field and microstructure of RE1+ xBa2− xCu3O6+ y films | |
Qiu et al. | Heteroepitaxial multilayer of YBa2Cu3O7 and PrBa2Cu3O7 on SrTiO3 and LaAlO3 substrates by sputtering | |
Lee et al. | LaAlO/sub 3/-YBCO multilayers | |
Yao et al. | Investigation on the Superconducting Properties of YGBCO/STO/YGBCO Trilayer | |
Jedamzik et al. | GdBa/sub 2/Cu/sub 3/O/sub x/for microwave applications: preparation, properties and devices | |
Wang et al. | Self-oxidized NiO on cube-textured Ni for YBCO coated superconductor | |
Christen et al. | Biaxially oriented metallic tape substrates for high-temperature superconductors | |
Zhao | High-TC superconductor thin films | |
Su et al. | Fabrication and properties of (Hg, Pb) Ba 2 Ca 2 Cu 3 O 8+ δ silver-sheathed tapes | |
Kent et al. | Direct measurements of the effects of inhomogeneities on the normal-state transport properties of YBa/sub 2/Cu/sub 3/O/sub 7/minus//ital x//thin films | |
YUANGUANSEN et al. | THE STUDY OF SPUTTERING YBCO EPITAXIAL FILMS | |
Chrzanowski et al. | Correlations between critical current density, j {sub c}, critical temperature, T {sub c}, and structural quality of Y {sub 1} B {sub 2} Cu {sub 3} O {sub 7-x} thin superconducting films | |
Villegier et al. | In-situ deposition and processing of YBa sub 2 Cu sub 3 O sub 7 minus x films and multilayers for optoelectronic devices |