Chang et al., 2006 - Google Patents
Development of a low temperature MEMS process with a PECVD amorphous silicon structural layerChang et al., 2006
- Document ID
- 17819946678244315651
- Author
- Chang S
- Sivoththaman S
- Publication year
- Publication venue
- Journal of Micromechanics and Microengineering
External Links
Snippet
Amorphous silicon (a-Si: H) deposited at 150 C by plasma-enhanced chemical vapor deposition (PECVD) is investigated as a structural layer for low temperature microelectromechanical system (MEMS) fabrication. The process development of depositing …
- 229910021417 amorphous silicon 0 title abstract description 94
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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