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Rao et al., 2010 - Google Patents

Impedance spectroscopy studies of K 0.5 Bi 0.5 TiO 3

Rao et al., 2010

Document ID
17803827425290042152
Author
Rao P
Sankaram T
Publication year
Publication venue
Journal of electroceramics

External Links

Snippet

Abstract Lead free Potassium bismuth Titanate K 0.5 Bi 0.5 TiO 3 (KBT) was prepared by high temperature solid state reaction method in a closed crucible with excess KBT powder around the samples. A room temperature study of XRD confirms, single phase formation with …
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Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/16—Selection of materials
    • H01L41/18—Selection of materials for piezo-electric or electrostrictive devices, e.g. bulk piezo-electric crystals
    • H01L41/187—Ceramic compositions, i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
    • H01L41/1878—Bismuth based oxides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L37/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L37/02—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof using thermal change of dielectric constant, e.g. working above and below Curie point, e.g. pyroelectric devices

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