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Belenky et al., 2013 - Google Patents

Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications

Belenky et al., 2013

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Document ID
17878492193117108319
Author
Belenky G
Wang D
Lin Y
Donetsky D
Kipshidze G
Shterengas L
Westerfeld D
Sarney W
Svensson S
Publication year
Publication venue
Applied Physics Letters

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Metamorphic heterostructures containing bulk InAs1ÀxSbx layers and AlInAsSb barriers were grown on GaSb substrates. The lattice mismatch (up to 2.1%) between the GaSb substrates and the InAsSb layers was accommodated by the growth of GaInSb linearly …
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    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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