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Yang et al., 2024 - Google Patents

NPDC structure double-channel N-polar E-mode GaN HEMTs: Innovations in enhancing RF and DC performance and mitigating trap effects

Yang et al., 2024

Document ID
17098554338904554698
Author
Yang L
Sun H
Lv R
Liu Z
Zhang Y
Yuan L
Guo Z
Huang Y
Li J
Publication year
Publication venue
Microelectronics Journal

External Links

Snippet

High-electron-mobility transistors (HEMTs) based on gallium nitride (GaN) are favored for their exceptional performance in high-power and high-frequency applications. However, developing dual-channel HEMTs presents challenges due to spontaneous polarization …
Continue reading at www.sciencedirect.com (other versions)

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