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Yen et al., 2014 - Google Patents

Conformal graphene coating on high-aspect ratio Si nanorod arrays by a vapor assisted method for field emitter

Yen et al., 2014

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Document ID
16832611993240483989
Author
Yen W
Medina H
Hsu C
Chueh Y
Publication year
Publication venue
RSC advances

External Links

Snippet

Carbon materials like nanotubes and graphene have been previously used for field emission application due to their high emission currents and low turn-on voltages. However, in most cases, these devices show low reliability and poor endurance after a few hours of …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/0206—Nanosized carbon materials
    • C01B31/022—Carbon nanotubes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/04—Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
    • C01B31/0438—Graphene
    • C01B31/0446—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/0206—Nanosized carbon materials
    • C01B31/0293—Other structures, e.g. nano-onions, nano-scrolls, nano-horns, nano-cones or nano-walls
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)

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