Nothing Special   »   [go: up one dir, main page]

Cochrane et al., 2012 - Google Patents

Zero-field detection of spin dependent recombination with direct observation of electron nuclear hyperfine interactions in the absence of an oscillating electromagnetic …

Cochrane et al., 2012

Document ID
16832557625641096274
Author
Cochrane C
Lenahan P
Publication year
Publication venue
Journal of Applied Physics

External Links

Snippet

Electrically detected magnetic resonance (EDMR) involves the electron paramagnetic resonance (EPR) study of spin dependent transport mechanisms such as spin dependent tunneling and spin dependent recombination (SDR) in solid state electronics. Conventional …
Continue reading at pubs.aip.org (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/28—Details of apparatus provided for in groups G01R33/44 - G01R33/64
    • G01R33/32—Excitation or detection systems, e.g. using radio frequency signals
    • G01R33/34—Constructional details, e.g. resonators, specially adapted to MR
    • G01R33/34015—Temperature-controlled RF coils
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/44—Arrangements or instruments for measuring magnetic variables involving magnetic resonance using nuclear magnetic resonance [NMR]
    • G01R33/46—NMR spectroscopy
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices

Similar Documents

Publication Publication Date Title
Cochrane et al. Zero-field detection of spin dependent recombination with direct observation of electron nuclear hyperfine interactions in the absence of an oscillating electromagnetic field
Bienfait et al. Controlling spin relaxation with a cavity
Cochrane et al. Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination
Baker et al. Robust absolute magnetometry with organic thin-film devices
Tracy et al. Single shot spin readout using a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures
Quinsat et al. Injection locking of tunnel junction oscillators to a microwave current
Aichinger et al. Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect
Bittel et al. Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors
Anders et al. Physical nature of electrically detected magnetic resonance through spin dependent trap assisted tunneling in insulators
Anders et al. Multi-resonance frequency spin dependent charge pumping and spin dependent recombination-applied to the 4H-SiC/SiO2 interface
US9810756B2 (en) Zero- and low-field transport detection system
Anders et al. Relationship between the 4H-SiC/SiO 2 interface structure and electronic properties explored by electrically detected magnetic resonance
Cochrane et al. Spin counting in electrically detected magnetic resonance via low-field defect state mixing
Schnegg et al. Frequency domain Fourier transform THz-EPR on single molecule magnets using coherent synchrotron radiation
Ashton et al. A new analytical tool for the study of radiation effects in 3-D integrated circuits: Near-zero field magnetoresistance spectroscopy
Bhattacharya et al. Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves
Cochrane et al. Detection of interfacial Pb centers in Si/SiO2 metal-oxide-semiconducting field-effect transistors via zero-field spin dependent recombination with observation of precursor pair spin-spin interactions
Durkan Detection of single electronic spins by scanning tunnelling microscopy
Frantz et al. Electrically detected magnetic resonance and near-zero field magnetoresistance in 28Si/28SiO2
Kemppinen et al. Long hold times in a two-junction electron trap
Ashton et al. Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors
Malissa et al. Anisotropy of g-factor and electron spin resonance linewidth in modulation doped SiGe quantum wells
Lew et al. Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide
Ashton et al. Ultra-low field frequency-swept electrically detected magnetic resonance
Waskiewicz et al. Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors