Escher et al., 1973 - Google Patents
Calculated energy distributions of electrons emitted from negative electron affinity GaAs: Cs–O surfacesEscher et al., 1973
- Document ID
- 16827941812935783669
- Author
- Escher J
- Schade H
- Publication year
- Publication venue
- Journal of Applied Physics
External Links
Snippet
The energy distribution of electrons emitted from negative electron affinity (NEA) GaAs: Cs– O has been calculated for various doping concentrations (1× 1018− 2× 1019 cm− 3) and work functions (0.95–1.15 eV). It has been assumed that electrons to be emitted have …
- 229910001218 Gallium arsenide 0 title abstract description 15
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/14—Solid thermionic cathodes characterised by the material
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J45/00—Discharge tubes functioning as thermionic generators
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
- H01J40/02—Details
- H01J40/04—Electrodes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J17/00—Gas-filled discharge tubes with solid cathode
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted to the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
- H01J40/16—Photoelectric discharge tubes not involving the ionisation of a gas having photo- emissive cathode, e.g. alkaline photoelectric cell
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Escher et al. | Calculated energy distributions of electrons emitted from negative electron affinity GaAs: Cs–O surfaces | |
| US3478213A (en) | Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon | |
| Martinelli et al. | The application of semiconductors with negative electron affinity surfaces to electron emission devices | |
| James et al. | Dependence on Crystalline Face of the Band Bending in Cs2 O‐Activated GaAs | |
| US2960659A (en) | Semiconductive electron source | |
| US3644770A (en) | Photoemitter having a p-type semiconductive substrate overlaid with cesium and n-type cesium oxide layers | |
| US3581151A (en) | Cold cathode structure comprising semiconductor whisker elements | |
| US3387161A (en) | Photocathode for electron tubes | |
| Garbe | CsF, Cs as a low work function layer on the GaAs photocathode | |
| US3986065A (en) | Insulating nitride compounds as electron emitters | |
| US3408521A (en) | Semiconductor-type photocathode for an infrared device | |
| Oettinger et al. | Photoelectron sources: Selection and analysis | |
| Seib et al. | Photodetectors for the 0.1 to 1.0 μm Spectral Region | |
| US2985783A (en) | Thin screen members | |
| US4853754A (en) | Semiconductor device having cold cathode | |
| Scheer et al. | The influence of cesium adsorption on surface fermi level position in gallium arsenide | |
| Sommer | Practical use of III-V compound electron emitters | |
| Howorth et al. | Electric field enhancement of escape probability on negative‐electron‐affinity surfaces | |
| US6069445A (en) | Having an electrical contact on an emission surface thereof | |
| US3321659A (en) | Radiation sensitive electron emissive device | |
| EP3682461B1 (en) | Thermally assisted negative electron affinity photocathode | |
| US3058022A (en) | Photoelectric generator | |
| Kressel et al. | Heterojunction cold-cathode electron emitters of (AlGa) As-GaAs | |
| Faulkner et al. | A practical p‐n junction cold cathode | |
| US3845496A (en) | Infrared photocathode |