Koga et al., 2007 - Google Patents
Transport of nano-particles in capacitively coupled rf discharges without and with amplitude modulation of discharge voltageKoga et al., 2007
- Document ID
- 16818445838161398929
- Author
- Koga K
- Iwashita S
- Shiratani M
- Publication year
- Publication venue
- Journal of Physics D: Applied Physics
External Links
Snippet
Transport of nano-particles in rf discharges without and with an amplitude modulation (AM) of the discharge voltage has been examined using a two-dimensional laser-light-scattering method. During the discharging period, nano-particles are mainly generated in the …
- 239000002105 nanoparticle 0 title abstract description 63
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Koga et al. | Transport of nano-particles in capacitively coupled rf discharges without and with amplitude modulation of discharge voltage | |
| Boufendi et al. | Dusty plasma for nanotechnology | |
| Kersten et al. | Micro‐Disperse Particles in Plasmas: From Disturbing Side Effects to New Applications | |
| EP0411317B1 (en) | Method and apparatus for continuously forming functional deposited films with a large area by microwave plasma CVD | |
| Huang et al. | Macro-particle reduction mechanism in biased arc ion plating of TiN | |
| Backes et al. | Evidence for a 2D-metallic state of the clean 7× 7 Si (111) surface | |
| Fukuzawa et al. | Detection of particles in rf silane plasmas using photoemission method | |
| Kersten et al. | Surface modification of powder particles by plasma deposition of thin metallic films | |
| Kersten et al. | Complex (dusty) plasmas: Examples for applications and observation of magnetron-induced phenomena | |
| Watanabe | Dust phenomena in processing plasmas | |
| Nunomura et al. | Plasma-induced electronic defects: generation and annihilation kinetics in hydrogenated amorphous silicon | |
| Watanabe et al. | Growth kinetics and behavior of dust particles in silane plasmas | |
| US20180138039A1 (en) | Method of fabricating black phosphorus ultrathin film and black phosphorus ultrathin film thereof | |
| Ezugwu et al. | Three-dimensional scanning near field optical microscopy (3D-SNOM) imaging of random arrays of copper nanoparticles: implications for plasmonic solar cell enhancement | |
| Chia et al. | Work function alteration of the porous indium tin oxide nanorods film by electron beam irradiation technique | |
| Shiratani et al. | Rapid transport of nano-particles having a fractional elementary charge on average in capacitively-coupled rf discharges by amplitude-modulating discharge voltage | |
| Shirai et al. | The generation of high-density microwave plasma and its application to large-area microcrystalline silicon thin film formation | |
| Minami et al. | SiO2 electret thin films prepared by various deposition methods | |
| Nivas et al. | Laser-induced periodic surface structuring for secondary electron yield reduction of copper: dependence on ambient gas and wavelength | |
| Otobe et al. | Fabrication of nanocrystalline Si by SiH4 plasma cell | |
| Szkutnik et al. | Ge nanocrystals formation on SiO2 by dewetting: application to memory | |
| Tian et al. | Recent progress in plasma modification of 2D metal chalcogenides for electronic devices and optoelectronic devices | |
| Lorusso et al. | Overview on development of metallic and superconducting photocathodes by the PLD technique for linear accelerator sources | |
| Tyczkowski | Audio-frequency glow discharge for plasma chemical vapor deposition from organic compounds of the carbon family | |
| Glembocki et al. | The Effects of P2S5 Surface Passivation on Dry Etched GaAs |