Nothing Special   »   [go: up one dir, main page]

Fritz et al., 2021 - Google Patents

Online junction temperature monitoring of power semiconductor devices based on a wheatstone bridge

Fritz et al., 2021

View PDF
Document ID
16817609464776004940
Author
Fritz N
Friedel M
De Doncker R
Polom T
Publication year
Publication venue
2021 IEEE Energy Conversion Congress and Exposition (ECCE)

External Links

Snippet

Monitoring the junction temperature of power semi-conductor devices is a requirement for degradation monitoring and predictive maintenance of power-electronic converters and usually achieved by online measurement of a temperature-sensitive electrical parameter …
Continue reading at publications.rwth-aachen.de (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring, busbar connections
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only

Similar Documents

Publication Publication Date Title
Zhang et al. Online junction temperature monitoring using intelligent gate drive for SiC power devices
van der Broeck et al. IGBT junction temperature estimation via gate voltage plateau sensing
Griffo et al. Real-time measurement of temperature sensitive electrical parameters in SiC power MOSFETs
Mandeya et al. Gate–emitter pre-threshold voltage as a health-sensitive parameter for IGBT chip failure monitoring in high-voltage multichip IGBT power modules
Sun et al. Design, analysis, and discussion of short circuit and overload gate-driver dual-protection scheme for 1.2-kV, 400-A SiC MOSFET modules
Smet et al. Evaluation of $ V_ {\rm ce} $ Monitoring as a Real-Time Method to Estimate Aging of Bond Wire-IGBT Modules Stressed by Power Cycling
Niu et al. Evaluating different implementations of online junction temperature sensing for switching power semiconductors
Yang et al. Design methodology of DC power cycling test setup for SiC MOSFETs
Anurag et al. An accurate calorimetric loss measurement method for SiC MOSFETs
Sundaramoorthy et al. Simultaneous online estimation of junction temperature and current of IGBTs using emitter-auxiliary emitter parasitic inductance
Niu et al. Sensing IGBT junction temperature using gate drive output transient properties
Yang et al. A method of junction temperature estimation for SiC power MOSFETs via turn-on saturation current measurement
Li et al. A turn-off delay time measurement and junction temperature estimation method for IGBT
Fritz et al. Evaluating on-state voltage and junction temperature monitoring concepts for wide-bandgap semiconductor devices
Anurag et al. An accurate calorimetric method for measurement of switching losses in silicon carbide (SiC) MOSFETs
Bergogne et al. Towards an airborne high temperature SiC inverter
Rizzo et al. Intrusiveness of power device condition monitoring methods: Introducing figures of merit for condition monitoring
Fritz et al. Online junction temperature monitoring of power semiconductor devices based on a wheatstone bridge
Zheng et al. Monitoring of SiC MOSFET junction temperature with on-state voltage at high currents
Yang et al. A method for junction temperature estimation utilizing turn-on saturation current for SiC MOSFET
Yu et al. Online Accurate Measurement of Steady-Thermal Resistance of SiC MOSFET s for DC Solid-State Power Controller
Barón et al. Online monitoring of degradation sensitive electrical parameters in inverter operation for sic-mosfets
Farhadi et al. AC power cycling test setup and condition monitoring tools for SiC-based traction inverters
Weimer et al. Accuracy study of calorimetric switching loss energy measurements for wide bandgap power transistors
Hoeer et al. Online temperature estimation of a high-power 4.5 kV IGBT module based on the gate-emitter threshold voltage