Nothing Special   »   [go: up one dir, main page]

Yang et al., 2023 - Google Patents

Online junction temperature estimation method for SiC MOSFETs based on the DC bus voltage undershoot

Yang et al., 2023

View PDF
Document ID
16610928763291682938
Author
Yang Y
Wu Y
Ding X
Zhang P
Publication year
Publication venue
IEEE Transactions on Power Electronics

External Links

Snippet

Silicon carbide (SiC) power devices are promising in industrial applications. Junction temperature monitoring is greatly significant for improving the reliability of devices and systems. However, state-of-the-art SiC MOSFET junction temperature estimation methods …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2621Circuits therefor for testing field effect transistors, i.e. FET's
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2642Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/34Testing dynamo-electric machines
    • G01R31/343Testing dynamo-electric machines in operation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/18Arrangements for measuring currents or voltages or for indicating presence or sign thereof using conversion of dc into ac, e.g. with choppers

Similar Documents

Publication Publication Date Title
Jiang et al. Online junction temperature measurement for SiC MOSFET based on dynamic threshold voltage extraction
Zhang et al. Online junction temperature monitoring using intelligent gate drive for SiC power devices
Yang et al. A fast IGBT junction temperature estimation approach based on ON-state voltage drop
Pu et al. In situ degradation monitoring of SiC MOSFET based on switching transient measurement
Pu et al. A practical on-board SiC MOSFET condition monitoring technique for aging detection
Kexin et al. Study of bonding wire failure effects on external measurable signals of IGBT module
Farhadi et al. Temperature-independent gate-oxide degradation monitoring of SiC MOSFETs based on junction capacitances
Yang et al. Online junction temperature estimation method for SiC MOSFETs based on the DC bus voltage undershoot
Wang et al. A junction temperature monitoring method for IGBT modules based on turn-off voltage with convolutional neural networks
Yang et al. A novel converter-level IGBT junction temperature estimation method based on the bus voltage ringing
Ali et al. A simple plug-in circuit for IGBT gate drivers to monitor device aging: Toward smart gate drivers
Baker et al. Online junction temperature measurement using peak gate current
Yang et al. In situ insulated gate bipolar transistor junction temperature estimation method via a bond wire degradation independent parameter turn-off V ce overshoot
Du et al. Estimating junction temperature of SiC MOSFET using its drain current during turn-on transient
Jiang et al. Investigation on degradation of SiC MOSFET under accelerated stress in a PFC converter
Yang et al. In situ junction temperature monitoring and bond wire detecting method based on IGBT and FWD on-state voltage drops
Zhang et al. Online junction temperature monitoring using turn-off delay time for silicon carbide power devices
Sun et al. An online junction temperature monitoring correction method for SiC MOSFETs at different parasitic parameters
Wang et al. Online condition monitoring for bond wire degradation of IGBT modules in three-level neutral-point-clamped converters
Xie et al. Online gate-oxide degradation monitoring of planar SiC MOSFETs based on gate charge time
Brandelero et al. Online junction temperature measurements for power cycling power modules with high switching frequencies
Yang et al. A method for junction temperature estimation utilizing turn-on saturation current for SiC MOSFET
Chen et al. Degradation assessment of 1.2-kV SiC MOSFETs and comparative study with 1.2-kV Si IGBTs under power cycling
Ren et al. Real-time aging monitoring for power MOSFETs using threshold voltage
Yang et al. A novel in situ IGBT and FWD junction temperature estimation technique for IGBT module based on on-state voltage drop measurement