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Du et al., 2021 - Google Patents

Quantum dot color conversion efficiency enhancement in micro-light-emitting diodes by non-radiative energy transfer

Du et al., 2021

Document ID
16656473751968281915
Author
Du Z
Li D
Guo W
Xiong F
Tang P
Zhou X
Zhang Y
Guo T
Yan Q
Sun J
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

The quantum dot (QD) color-conversion efficiency (CCE) in GaN micro-light-emitting diodes (μLEDs) is greatly improved by non-radiative energy transfer (NRET) mechanism. An array of deep nano-holes with a diameter of about 1 μm was fabricated in μLED mesas (40× 60 …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52—Details of devices
    • H01L51/5203—Electrodes
    • H01L51/5206—Anodes, i.e. with high work-function material
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    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photo-luminescent region integrated within the semiconductor body
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    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
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