Luojie et al., 2012 - Google Patents
An improved analytic expression for write amplification in NAND flashLuojie et al., 2012
- Document ID
- 16310998674983403592
- Author
- Luojie X
- Kurkoski B
- Publication year
- Publication venue
- 2012 International Conference on Computing, Networking and Communications (ICNC)
External Links
Snippet
Agarwal et al. gave a closed-form expression for write amplification in NAND flash memory by finding the probability of a page being valid over the whole flash memory. This paper gives an improved analytic expression for write amplification in NAND flash memory by …
- 230000003321 amplification 0 title abstract description 33
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Free address space management in non-volatile memory
- G06F12/0246—Free address space management in non-volatile memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0253—Garbage collection, i.e. reclamation of unreferenced memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7205—Cleaning, compaction, garbage collection, erase control
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/12—Replacement control
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from or digital output to record carriers, e.g. RAID, emulated record carriers, networked record carriers
- G06F3/0601—Dedicated interfaces to storage systems
- G06F3/0628—Dedicated interfaces to storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/064—Management of blocks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7202—Allocation control and policies
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
- G06F2212/1036—Life time enhancement
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from or digital output to record carriers, e.g. RAID, emulated record carriers, networked record carriers
- G06F3/0601—Dedicated interfaces to storage systems
- G06F3/0602—Dedicated interfaces to storage systems specifically adapted to achieve a particular effect
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from or digital output to record carriers, e.g. RAID, emulated record carriers, networked record carriers
- G06F3/0601—Dedicated interfaces to storage systems
- G06F3/0668—Dedicated interfaces to storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/30—Information retrieval; Database structures therefor; File system structures therefor
- G06F17/30067—File systems; File servers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/20—Employing a main memory using a specific memory technology
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Luojie et al. | An improved analytic expression for write amplification in NAND flash | |
US10838859B2 (en) | Recency based victim block selection for garbage collection in a solid state device (SSD) | |
CN107368429B (en) | Data storage device, memory controller, data management method thereof and data block management method | |
Hu et al. | Write amplification analysis in flash-based solid state drives | |
CN105045523B (en) | Memory controller, memory device and system, and method of operating memory controller | |
Kang et al. | A superblock-based flash translation layer for NAND flash memory | |
EP2439645B1 (en) | Method and apparatus for storing data in a multi-level cell flash memory device | |
US9152559B2 (en) | Metadata storage associated with wear-level operation requests | |
TWI506421B (en) | System, method, and computer program product for increasing spare space in memory to extend a lifetime of the memory | |
Agarwal et al. | A closed-form expression for write amplification in nand flash | |
US8200889B2 (en) | Variable space page mapping method and apparatus for flash memory device | |
Haas et al. | The fundamental limit of flash random write performance: Understanding, analysis and performance modelling | |
EP1576593B1 (en) | Dual journaling store method and storage medium thereof | |
JP2009099149A (en) | Control method of adaptive hybrid density memory storage device, and adaptive hybrid density memory storage device | |
Kwon et al. | Swap space management technique for portable consumer electronics with NAND flash memory | |
CN112130749B (en) | Data storage device and non-volatile memory control method | |
Park et al. | High-performance scalable flash file system using virtual metadata storage with phase-change RAM | |
KR101480424B1 (en) | Apparatus and method for optimization for improved performance and enhanced lifetime of hybrid flash memory devices | |
US20100125697A1 (en) | Computing device having storage, apparatus and method of managing storage, and file system recorded recording medium | |
CN101794253B (en) | Memory storage device and control method thereof, and hot data control module | |
Ross | Modeling the performance of algorithms on flash memory devices | |
CN113010091B (en) | Method for writing data into solid state disk, method and device for recycling garbage | |
US20200210345A1 (en) | Non-volatile memory device using efficient page collection mapping in association with cache and method of operating the same | |
Xiang et al. | An improved analytical expression for write amplification in nand flash | |
Khanbadr et al. | A novel method for victim block selection for NAND flash-based solid state drives based on scoring |