Lei et al., 2019 - Google Patents
High-power single-longitudinal-mode double-tapered gain-coupled distributed feedback semiconductor lasers based on periodic anodes defined by i-line lithographyLei et al., 2019
- Document ID
- 16279943838174405402
- Author
- Lei Y
- Chen Y
- Gao F
- Ma D
- Jia P
- Wu H
- Chen C
- Liang L
- Zhang J
- Tian J
- Qin L
- Ning Y
- Wang L
- Publication year
- Publication venue
- Optics Communications
External Links
Snippet
In this paper, we demonstrate a regrowth-free double-tapered gain-coupled distributed feedback semiconductor laser. It is designed based on periodic surface current injection to reach a high-power and single-longitudinal mode. A continuous-wave output power of over …
- 230000000737 periodic 0 title abstract description 19
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- H01S5/125—Distributed Bragg reflector lasers (DBR-lasers)
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- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers) incorporating phase shifts
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