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Yang et al., 1998 - Google Patents

A snap-shot CMOS active pixel imager for low-noise, high-speed imaging

Yang et al., 1998

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Document ID
16193200098665432286
Author
Yang G
Yadid-Pecht O
Wrigley C
Pain B
Publication year
Publication venue
International Electron Devices Meeting 1998. Technical Digest (Cat. No. 98CH36217)

External Links

Snippet

Design and performance of a 128/spl times/128 snap-shot imager implemented in a standard single-poly CMOS technology is presented. A new pixel design and clocking scheme allow the imager to provide high-quality images without motion artifacts at high …
Continue reading at 202011282002569657330.onamaeweb.jp (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369—SSIS architecture; Circuitry associated therewith
    • H04N5/374—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N5/3745—Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N5/37452—Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising additional storage means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/351—Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
    • H04N5/355—Control of the dynamic range
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/357—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N5/361—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369—SSIS architecture; Circuitry associated therewith
    • H04N5/378—Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/357—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N5/365—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N5/3651—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection and correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems
    • H04N3/10—Scanning details of television systems by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/222—Studio circuitry; Studio devices; Studio equipment; Cameras comprising an electronic image sensor, e.g. digital cameras, video cameras, TV cameras, video cameras, camcorders, webcams, camera modules for embedding in other devices, e.g. mobile phones, computers or vehicles
    • H04N5/225—Television cameras; Cameras comprising an electronic image sensor, e.g. digital cameras, video cameras, video cameras, camcorders, webcams, camera modules for embedding in other devices, e.g. mobile phones, computers or vehicles
    • H04N5/235—Circuitry or methods for compensating for variation in the brightness of the object, e.g. based on electric image signals provided by an electronic image sensor
    • H04N5/2355—Circuitry or methods for compensating for variation in the brightness of the object, e.g. based on electric image signals provided by an electronic image sensor by increasing the dynamic range of the final image compared to the dynamic range of the electronic image sensor, e.g. by adding correct exposed portions of short and long exposed images
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

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