Nothing Special   »   [go: up one dir, main page]

Wollmann et al., 2017 - Google Patents

Heusler 4.0: tunable materials

Wollmann et al., 2017

View PDF
Document ID
15971228611890112354
Author
Wollmann L
Nayak A
Parkin S
Felser C
Publication year
Publication venue
Annual Review of Materials Research

External Links

Snippet

Heusler compounds are a large family of binary, ternary, and quaternary compounds that exhibit a wide range of properties of both fundamental and potential technological interest. The extensive tunability of the Heusler compounds through chemical substitutions and …
Continue reading at arxiv.org (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/0072—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity one dimensional, i.e. linear or dendritic nanostructures
    • H01F1/0081—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity one dimensional, i.e. linear or dendritic nanostructures in a non-magnetic matrix, e.g. Fe-nanowires in a nanoporous membrane
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/10—Selection of materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/02—Details
    • H01L39/12—Details characterised by the material
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/012—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials adapted for magnetic entropy change by magnetocaloric effect, e.g. used as magnetic refrigerating material
    • H01F1/017—Compounds
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/06—Hall-effect devices
    • H01L43/065—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/08—Magnetic-field-controlled resistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer

Similar Documents

Publication Publication Date Title
Wollmann et al. Heusler 4.0: tunable materials
Felser et al. Spintronics: a challenge for materials science and solid‐state chemistry
He et al. Topological materials: quantum anomalous Hall system
Ma et al. Computational investigation of inverse Heusler compounds for spintronics applications
Graf et al. Simple rules for the understanding of Heusler compounds
Back et al. The 2020 skyrmionics roadmap
Faleev et al. Heusler compounds with perpendicular magnetic anisotropy and large tunneling magnetoresistance
Manna et al. Heusler, weyl and berry
Faleev et al. Origin of the tetragonal ground state of Heusler compounds
US10403425B2 (en) Layered Heusler alloys and methods for the fabrication and use thereof
Felser et al. Tetragonal Heusler compounds for spintronics
Hirohata et al. Development of antiferromagnetic Heusler alloys for the replacement of iridium as a critically raw material
US8277575B2 (en) Compounds and methods of fabricating compounds exhibiting giant magnetoresistence and spin-polarized tunneling
Graf et al. Magnetic heusler compounds
Chatterjee et al. Transport properties of Heusler compounds and alloys
Alijani et al. Quaternary Heusler compounds Co2− xRhxMnZ (Z= Ga, Sn, Sb): crystal structure, electronic structure, and magnetic properties
Aull et al. Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistors
Aguilera-Granja et al. A first principles systematic study of the structural, electronic, and magnetic properties of Heusler X2MnZ with X= Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Pt, Au and Z= Al, Si, Ga, Ge, In and Sn
Zhang et al. Progress in ferrimagnetic Mn4N films and its heterostructures for spintronics applications
Hadji et al. Spin gapless semiconductor and nearly spin semimetal antiferromagnets: The case of the inverse Heusler compounds Mn2LiZ (Z= Al and Ga)
Wu et al. All-oxide nanocomposites to yield large, tunable perpendicular exchange bias above room temperature
Ito et al. Transition metal nitrides and their mixed crystals for spintronics
Kumar et al. Room temperature magnetoresistance in Sr2FeMoO6/SrTiO3/Sr2FeMoO6 trilayer devices
Kudo et al. Great differences between low-temperature grown Co2FeSi and Co2MnSi films on single-crystalline oxides
Roy et al. IrCrMnZ (Z= Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study