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Lan et al., 2019 - Google Patents

Characteristics of blue GaN/InGaN quantum-well light-emitting transistor

Lan et al., 2019

Document ID
1570125014438795053
Author
Lan H
Tseng I
Lin Y
Chang S
Wu C
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

We demonstrate simultaneous electrical and optical modulations of the first GaN/InGaN quantum-well light-emitting transistor (QW-LET) which contains an In0. 15 Ga0. 85N QW in the heavily p-doped In0. 05 Ga0. 95N base. Unlike GaAs/InGaAs counterparts, the …
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
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    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
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