Nothing Special   »   [go: up one dir, main page]

Cha et al., 2010 - Google Patents

A CMOS MedRadio receiver RF front-end with complementary current-reuse LNA for biomedical applications

Cha et al., 2010

Document ID
15427663080737367027
Author
Cha H
Raja M
Yuan X
Je M
Publication year
Publication venue
2010 IEEE Asian Solid-State Circuits Conference

External Links

Snippet

An ultra-low-power 401-406 MHz Medical Device Radiocommunication Service (MedRadio) receiver RF front-end for biomédical telemetry applications is implemented using 0.18-μm CMOS technology with a 1-V supply voltage. The receiver RF front-end employs the …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45197—Pl types
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45296—Indexing scheme relating to differential amplifiers the AAC comprising one or more discrete capacitive elements, e.g. a transistor coupled as capacitor
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45481—Indexing scheme relating to differential amplifiers the CSC comprising only a direct connection to the supply voltage, no other components being present
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45392—Indexing scheme relating to differential amplifiers the AAC comprising resistors in the source circuit of the AAC before the common source coupling
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors

Similar Documents

Publication Publication Date Title
US9595991B2 (en) Low power radio receiver
Cha et al. A CMOS MedRadio receiver RF front-end with a complementary current-reuse LNA
Camus et al. A 5.4 mW/0.07 mm $^{2} $2.4 GHz front-end receiver in 90 nm CMOS for IEEE 802.15. 4 WPAN standard
US8957732B2 (en) Amplifier and transceiver including the amplifier
Parvizi et al. A 0.4 V ultra low-power UWB CMOS LNA employing noise cancellation
Hu et al. Analysis and design of ultra-wideband low-noise amplifier with input/output bandwidth optimization and single-ended/differential-input reconfigurability
Krishnamurthy et al. 580µW 2.2-2.4 GHz receiver with+ 3.3 dBm out-of-band IIP3 for IoT applications
Shams et al. A 3.5 to 7 GHz Wideband Differential LNA with g m Enhancement for 5G Applications
CN104065346A (en) Broadband low noise amplifier circuit based on cross-coupled feedback
Cha et al. A CMOS MedRadio receiver RF front-end with complementary current-reuse LNA for biomedical applications
Jiang et al. A low-power sub-GHz RF receiver front-end with enhanced blocker tolerance
Ansari et al. A very wideband low noise amplifier for cognitive radios
Ghosh et al. A low-power receiver down-converter with high dynamic range performance
Arshad et al. Wideband common gate LNA with novel input matching technique
Shirmohammadi et al. A Low Power Wideband Balun-LNA Employing Local Feedback, Modified Current-Bleeding Technique and Balanced Loads
Yi et al. A Q-band CMOS LNA with noise cancellation
Jung et al. Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology
Mohamed et al. Design and implementation of an RF CMOS differential LNA for 403MHz applications
Wong et al. Design of 3 to 5 GHz CMOS low noise amplifier for ultra-wideband (UWB) system
Liu et al. An 89 μW MICS/ISM band receiver for ultra-low-power applications
Djugova et al. Inverter-based low-noise amplifier topologies for ultra-wideband applications
Jin et al. A 400-µW Low-IF IoT Receiver Front-End with Tunable Charge-Sharing Complex Filter
Boora et al. An ultra-low power 900 MHz intermediate frequency low noise amplifier for low-power RF receivers
Bao-lin et al. A 2.4-GHz low-IF front-end receiver in 0.18-µm CMOS for IEEE 802.15. 4 WPAN applications
Hao et al. A 0.1–8.5 GHz wideband CMOS LNA using forward body bias technology for SDR applications