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Guo et al., 2023 - Google Patents

Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V d= 12 V

Guo et al., 2023

Document ID
15347899401969413445
Author
Guo J
Zhu J
Liu S
Cheng K
Zhu Q
Wang P
Liu K
Zhao Z
Qin L
Zhou Y
Mi M
Hao Y
Ma X
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

In this letter, we present high-performance tri-gate normally-off HEMTs RF power devices using MOCVD-grown thin barrier SiN/AlN/GaN heterostructures. The normally-off devices exhibit alloyed Ohmic contact resistance of about mm, low threshold-voltage of 0.2 V, very …
Continue reading at ieeexplore.ieee.org (other versions)

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