Aytug et al., 2005 - Google Patents
Assessment of chemical solution synthesis and properties of Gd2Zr2O7 thin films as buffer layers for second-generation high-temperature superconductor wiresAytug et al., 2005
- Document ID
- 15195932588045831313
- Author
- Aytug T
- Paranthaman M
- Leonard K
- Zhai H
- Bhuiyan M
- Payzant E
- Goyal A
- Sathyamurthy S
- Beach D
- Martin P
- Christen D
- Li X
- Kodenkandath T
- Schoop U
- Rupich M
- Smith H
- Haugan T
- Barnes P
- Publication year
- Publication venue
- Journal of materials research
External Links
Snippet
Chemical solution processing of Gd2Zr2O7 (GZO) thin films via sol-gel and metalorganic decomposition (MOD) precursor routes have been studied on textured Ni-based tape substrates. Even though films processed by both techniques showed similar property …
- UIIMBOGNXHQVGW-UHFFFAOYSA-M buffer 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[Na+].OC([O-])=O 0 title abstract description 31
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
- H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
- H01L39/2422—Processes for depositing or forming superconductor layers
- H01L39/2454—Processes for depositing or forming superconductor layers characterised by the substrate
- H01L39/2461—Intermediate layers, e.g. for growth control
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/02—Details
- H01L39/12—Details characterised by the material
- H01L39/125—Ceramic materials
- H01L39/126—Ceramic materials comprising copper oxide
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
- H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
- H01L39/2464—After-treatment, e.g. patterning
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
- H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
- H01L39/2483—Introducing flux pinning centres
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/22—Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
- H01L39/223—Josephson-effect devices
- H01L39/225—Josephson-effect devices comprising high Tc ceramic materials
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