Nothing Special   »   [go: up one dir, main page]

Wang et al., 2021 - Google Patents

Phenomenon of Short-Time Threshold Voltage Shift and Its Application in Junction Temperature Estimation

Wang et al., 2021

View PDF
Document ID
1503240041128196299
Author
Wang X
Wu H
Pickert V
Publication year
Publication venue
2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)

External Links

Snippet

Silicon carbide (SiC) has seen tremendous advancement in high-efficiency, high-frequency, and high-temperature applications during recent years. However, the gate oxide of SiC MOSFET is reported to be less reliable compared with its Si counterpart, introducing the …
Continue reading at nrl.northumbria.ac.uk (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227—Testing dielectric strength or breakdown voltage; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1263—Testing dielectric strength or breakdown voltage; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
    • G01R31/2836—Fault-finding or characterising
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/02—Testing of electric apparatus, lines or components, for short-circuits, discontinuities, leakage of current, or incorrect line connection
    • G01R31/024—Arrangements for indicating continuity or short-circuits in electric apparatus or lines, leakage or ground faults

Similar Documents

Publication Publication Date Title
Fedison et al. COSS hysteresis in advanced superjunction MOSFETs
Puschkarsky et al. Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs
Ni et al. Miller plateau as an indicator of SiC MOSFET gate oxide degradation
CN106199366B (en) A kind of method of power MOS (Metal Oxide Semiconductor) device temperature measurement on-line
Puschkarsky et al. Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation
Du et al. Impact of repetitive short-circuit tests on the normal operation of SiC MOSFETs considering case temperature influence
Xie et al. Online gate-oxide degradation monitoring of planar SiC MOSFETs based on gate charge time
Asllani et al. V TH-hysteresis and interface states characterisation in SiC power MOSFETs with planar and trench gate
Unger et al. Influence of the off-state gate-source voltage on the transient drain current response of SiC MOSFETs
Du et al. Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules
Wang et al. Phenomenon of Short-Time Threshold Voltage Shift and Its Application in Junction Temperature Estimation
Nguyen et al. Investigation on reliability of SiC MOSFET under long-term extreme operating conditions
CN114895166A (en) Dynamic stress aging test method and system for GaN power device
Gómez et al. Deep Investigation on SiC MOSFET Degradation under Gate Switching Stress and Application Switching Stress
Wang et al. Investigations on the short-circuit degradation and its mechanism of 1.2-KV 19-A SiC power MOSFETs
Ghosh Reliability Studies in Silicon Carbide and Silicon Power MOSFETs
Stark et al. Analysis of parameters determining nominal dynamic performance of 1.2 kV SiC power MOSFETs
Yu et al. Online Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Parasitic Capacitance Aging Characteristics
Wang et al. An Junction Temperature Estimation Method in SiC MOSFET Modules Based on the Turn-off Delay Time and $ v_ {DS} $ Overshoot
Du et al. Implications of short-circuit degradation on the aging process in accelerated cycling tests of SiC MOSFETs
Sajadi et al. Reliability Evaluation of Isolated LDMOS Devices and Condition Monitoring Solution
Martino et al. Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
Karki Effect of gate-oxide degradation on electrical parameters of silicon and silicon carbide power MOSFETs
Franchi et al. 1200 V SiC MOSFETs with Stable VTH under High Temperature Gate Bias Stress
Pu Realibility Assessment, Condition Monitoring and Lifetime Estimation of Silicon Carbide Mosfets