Nothing Special   »   [go: up one dir, main page]

Sharma et al., 2013 - Google Patents

PECVD based silicon oxynitride thin films for nano photonic on chip interconnects applications

Sharma et al., 2013

View PDF
Document ID
15060715084416866991
Author
Sharma S
Barthwal S
Singh V
Kumar A
Dwivedi P
Prasad B
Kumar D
Publication year
Publication venue
Micron

External Links

Snippet

Thin silicon oxynitride (SiOxNy) films were deposited by low temperature (∼ 300° C) plasma enhanced chemical vapour deposition (PECVD), using SiH4, N2O, NH3 precursor of the flow rate 25, 100, 30sccm and subjected to the post deposition annealing (PDA) treatment at …
Continue reading at faculty.iitmandi.ac.in (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind

Similar Documents

Publication Publication Date Title
Sharma et al. PECVD based silicon oxynitride thin films for nano photonic on chip interconnects applications
KR101327923B1 (en) Boron nitride and boron nitride-derived materials deposition method
Alayo et al. Thick SiOxNy and SiO2 films obtained by PECVD technique at low temperatures
TWI355684B (en) Doped intride film, doped oxide film and other dop
TWI447913B (en) Replacement metal gate transistors with reduced gate oxide leakage
Kim et al. Thermal atomic layer deposition of device-quality SiO2 thin films under 100° C using an aminodisilane precursor
CN102097297B (en) Method for depositing high k gate dielectrics on atomic layer on graphene surface by adopting electric field induction
US8357927B2 (en) Semiconductor device and method for manufacturing the same
Jhansirani et al. Deposition of silicon nitride films using chemical vapor deposition for photovoltaic applications
JP6099657B2 (en) Silicon oxide layer direct bonding method
Meng et al. Hollow cathode plasma-enhanced atomic layer deposition of silicon nitride using pentachlorodisilane
JP2012169614A (en) Silicon structure, capacitance element using silicon structure and method for manufacturing silicon structure
Hussein et al. Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications
Park et al. The effect of gas composition on the properties of silicon oxynitride thin film prepared by low-pressure inductively coupled Ar/N2 plasma
Baek et al. Atomic layer chemical vapor deposition of SiO2 thin films using a chlorine-free silicon precursor for 3D NAND applications
Lee et al. Room temperature deposition of silicon dioxide films by ion‐assisted plasma enhanced chemical vapor deposition
US20220308289A1 (en) Integrated optical devices and methods of forming the same
Goncharova et al. Si quantum dots in silicon nitride: Quantum confinement and defects
Vainonen-Ahlgren et al. Atomic layer deposition of hafnium and zirconium silicate thin films
Yoon et al. Refractive index and etched structure of silicon nitride waveguides fabricated by PECVD
Park et al. Low temperature silicon dioxide film deposition by remote plasma enhanced chemical vapor deposition: growth mechanism
Pollet et al. Cyclic approach for silicon nitride spacer etching in fin field-effect transistors and stacked nanowire devices
Kim et al. Influence of hydrogen on SiON thick film for silica waveguide deposited by PECVD and annealing effect
Kim et al. Refractive index control of core layer using PECVD and FHD for silica optical waveguide
Herth et al. ICPECVD-dielectric thin-films CMOS-compatible: Trends in eco-friendly deposition