Mendel et al., 1969 - Google Patents
Polishing of silicon by the cupric ion processMendel et al., 1969
- Document ID
- 14636701985173032149
- Author
- Mendel E
- Yang K
- Publication year
- Publication venue
- Proceedings of the IEEE
External Links
Snippet
This paper describes a newly developed chem-mech polishing process for silicon wafers. This polishing process, without using any abrasives, can produce a silicon surface free of work damage. A solution composed of cupric nitrate, ammonium fluoride, and nitric acid is …
- 238000005498 polishing 0 title abstract description 73
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4600469A (en) | Method for polishing detector material | |
US3342652A (en) | Chemical polishing of a semi-conductor substrate | |
US4588473A (en) | Semiconductor wafer process | |
US6899762B2 (en) | Epitaxially coated semiconductor wafer and process for producing it | |
JP2894153B2 (en) | Method and apparatus for manufacturing silicon wafer | |
CN100435288C (en) | Process for producing silicon wafer | |
JP2006222453A (en) | Silicon wafer, method for manufacturing the same, and soi wafer | |
US6376335B1 (en) | Semiconductor wafer manufacturing process | |
Gutsche et al. | Polishing of sapphire with colloidal silica | |
US3436259A (en) | Method for plating and polishing a silicon planar surface | |
US4011099A (en) | Preparation of damage-free surface on alpha-alumina | |
WO2004107424A1 (en) | Method of processing silicon wafer | |
US5899731A (en) | Method of fabricating a semiconductor wafer | |
Mendel et al. | Polishing of silicon by the cupric ion process | |
US3615955A (en) | Method for polishing a silicon surface | |
JPH0429640B2 (en) | ||
CN109623581A (en) | A kind of surface polishing method of hard material | |
JP3446616B2 (en) | Method for etching silicon wafer and etchant for silicon wafer | |
US3869324A (en) | Method of polishing cadmium telluride | |
JP3066750B2 (en) | Manufacturing method of semiconductor wafer | |
US3738882A (en) | Method for polishing semiconductor gallium arsenide planar surfaces | |
EP0094302A3 (en) | A method of removing impurities from semiconductor wafers | |
JP2003197602A (en) | Method for manufacturing wafer | |
US5904568A (en) | Method of manufacturing a semiconductor wafer | |
US3775201A (en) | Method for polishing semiconductor gallium phosphide planar surfaces |