Nothing Special   »   [go: up one dir, main page]

Mendel et al., 1969 - Google Patents

Polishing of silicon by the cupric ion process

Mendel et al., 1969

Document ID
14636701985173032149
Author
Mendel E
Yang K
Publication year
Publication venue
Proceedings of the IEEE

External Links

Snippet

This paper describes a newly developed chem-mech polishing process for silicon wafers. This polishing process, without using any abrasives, can produce a silicon surface free of work damage. A solution composed of cupric nitrate, ammonium fluoride, and nitric acid is …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces

Similar Documents

Publication Publication Date Title
US4600469A (en) Method for polishing detector material
US3342652A (en) Chemical polishing of a semi-conductor substrate
US4588473A (en) Semiconductor wafer process
US6899762B2 (en) Epitaxially coated semiconductor wafer and process for producing it
JP2894153B2 (en) Method and apparatus for manufacturing silicon wafer
CN100435288C (en) Process for producing silicon wafer
JP2006222453A (en) Silicon wafer, method for manufacturing the same, and soi wafer
US6376335B1 (en) Semiconductor wafer manufacturing process
Gutsche et al. Polishing of sapphire with colloidal silica
US3436259A (en) Method for plating and polishing a silicon planar surface
US4011099A (en) Preparation of damage-free surface on alpha-alumina
WO2004107424A1 (en) Method of processing silicon wafer
US5899731A (en) Method of fabricating a semiconductor wafer
Mendel et al. Polishing of silicon by the cupric ion process
US3615955A (en) Method for polishing a silicon surface
JPH0429640B2 (en)
CN109623581A (en) A kind of surface polishing method of hard material
JP3446616B2 (en) Method for etching silicon wafer and etchant for silicon wafer
US3869324A (en) Method of polishing cadmium telluride
JP3066750B2 (en) Manufacturing method of semiconductor wafer
US3738882A (en) Method for polishing semiconductor gallium arsenide planar surfaces
EP0094302A3 (en) A method of removing impurities from semiconductor wafers
JP2003197602A (en) Method for manufacturing wafer
US5904568A (en) Method of manufacturing a semiconductor wafer
US3775201A (en) Method for polishing semiconductor gallium phosphide planar surfaces