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Zhao et al., 2021 - Google Patents

Formation and elimination mechanism of thermal blistering in Al2O3/Si system

Zhao et al., 2021

Document ID
14518253586607433405
Author
Zhao S
Yuan G
Zhang D
Xu P
Li G
Han W
Publication year
Publication venue
Journal of Materials Science

External Links

Snippet

The local delamination of dielectric oxides, manifesting as blistering, is always a puzzle preventing films from practical applications. In this work, an elaborate study on thermal blistering in Al2O3/Si system is reported. Blisters are proved to originate from the excess H …
Continue reading at link.springer.com (other versions)

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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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