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Kizilkan et al., 2022 - Google Patents

Guard-ring-free InGaAs/InP single-photon avalanche diode based on a novel one-step Zn-diffusion technique

Kizilkan et al., 2022

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Document ID
14477054736402735982
Author
Kizilkan E
Karaca U
Pešić V
Lee M
Bruschini C
SpringThorpe A
Walker A
Flueraru C
Pitts O
Charbon E
Publication year
Publication venue
IEEE Journal of Selected Topics in Quantum Electronics

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Snippet

This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 m diffusion apertures is used to engineer the Zn diffusion profile to suppress …
Continue reading at ieeexplore.ieee.org (PDF) (other versions)

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