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Choi et al., 2001 - Google Patents

Dielectric properties and leakage current characteristics of Al2O3 thin films with thickness variation

Choi et al., 2001

Document ID
14110268652718360384
Author
Choi J
Kim J
Oh T
Publication year
Publication venue
MRS Online Proceedings Library (OPL)

External Links

Snippet

Dielectric properties and leakage current characteristics of the Al2O3 thin films, deposited by reactive sputtering at room temperature, have been investigated with variations of the O2 content in the sputtering gas and the film thickness. The Al2O3 films of 10-300 nm thickness …
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
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