Huynh et al., 2013 - Google Patents
New Technique for Synthesizing Concurrent Dual-Band Impedance-Matching Filtering Networks and ${\hbox {0.18-}}\mu {\hbox {m}} $ SiGe BiCMOS 25.5/37-GHz …Huynh et al., 2013
- Document ID
- 13218490543310330799
- Author
- Huynh C
- Nguyen C
- Publication year
- Publication venue
- IEEE transactions on microwave theory and techniques
External Links
Snippet
<? Pub Dtl=""?> New technique for synthesizing concurrent dual-band impedance-matching filtering networks is presented. The technique enables the design of concurrent dual-band impedance-matching filtering networks that provide not only simultaneous matching of two …
- 238000001914 filtration 0 title abstract description 44
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/605—Distributed amplifiers
- H03F3/607—Distributed amplifiers using FET's
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45731—Indexing scheme relating to differential amplifiers the LC comprising a transformer
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B1/00—Details
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Huynh et al. | New Technique for Synthesizing Concurrent Dual-Band Impedance-Matching Filtering Networks and ${\hbox {0.18-}}\mu {\hbox {m}} $ SiGe BiCMOS 25.5/37-GHz Concurrent Dual-Band Power Amplifier | |
Rubio et al. | 3–3.6-GHz wideband GaN Doherty power amplifier exploiting output compensation stages | |
Guo et al. | Bandpass class-F power amplifier based on multifunction hybrid cavity–microstrip filter | |
Shakib et al. | A highly efficient and linear power amplifier for 28-GHz 5G phased array radios in 28-nm CMOS | |
Fu et al. | Novel dual-band matching network for effective design of concurrent dual-band power amplifiers | |
Liu et al. | A 2.4–6 GHz broadband GaN power amplifier for 802.11 ax application | |
Ali et al. | 220–360-GHz broadband frequency multiplier chains (x8) in 130-nm BiCMOS technology | |
CN109714011A (en) | A kind of GaAs radio-frequency power amplifier applied in the 5th third-generation mobile communication 28GHz | |
Wagner et al. | Single and Power-Combined Linear E-Band Power Amplifiers in 0.12-$\mu $ m SiGe With 19-dBm Average Power 1-GBaud 64-QAM Modulated Waveforms | |
Sessou et al. | An Integrated 700–1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13-$\mu $ m CMOS | |
Alizadeh et al. | Dual-band design of integrated class-J power amplifiers in GaAs pHEMT technology | |
Thian et al. | A 76–84 GHz SiGe power amplifier array employing low-loss four-way differential combining transformer | |
Kim et al. | A concurrent $ Ku/K/Ka $ tri-band distributed power amplifier with negative-resistance active notch using SiGe BiCMOS process | |
Lee et al. | A 57–78 GHz frequency tripler MMIC in 65-nm CMOS | |
Ahmed et al. | A SiGe-based broadband 100–180-GHz differential power amplifier with 11 dBm peak output power and> 1.3 THz GBW | |
Lin et al. | A K-band transformer based power amplifier with 24.4-dBm output power and 28% PAE in 90-nm CMOS technology | |
Huang et al. | A high-efficiency, broadband CMOS power amplifier for cognitive radio applications | |
Xie et al. | A high-efficiency 28 GHz/39 GHz dual-band power amplifier MMIC for 5G communication | |
Ozis et al. | Integrated quadrature couplers and their application in image-reject receivers | |
Rashtian et al. | Gain boosting in distributed amplifiers for close-to-f max operation in silicon | |
Ko et al. | D-Band Common-Base Amplifiers With Gain Boosting and Interstage Self-Matching in 0.18-$\mu\text {m} $ SiGe HBT Technology | |
Lee et al. | Dual Q/V-band SiGe BiCMOS low noise amplifiers using Q-enhanced metamaterial transmission lines | |
Bagger et al. | An 11 GHz–bandwidth variable gain Ka–band power amplifier for 5G applications | |
Öjefors et al. | An 8-way power-combining E-band amplifier in a SiGe HBT technology | |
Zihir et al. | Compact X-band SiGe power amplifier for single-chip phased array radar applications |