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Ahluwalia, 2017 - Google Patents

Data storage devices

Ahluwalia, 2017

Document ID
13105909431277161883
Author
Ahluwalia G
Publication year
Publication venue
Applications of Chalcogenides: S, Se, and Te

External Links

Snippet

Tellurium based materials are used in present-day commercial optical memory devices and are potential candidates for future solid-state data storage devices. The mainstream memory technologies and systems include solid-state memory, hard disk drive, and optical disk …
Continue reading at link.springer.com (other versions)

Classifications

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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/245—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing a polymeric component
    • G—PHYSICS
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
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    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
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    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
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    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements comprising amorphous/crystalline phase transition cells

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