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Mok et al., 2015 - Google Patents

Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes

Mok et al., 2015

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Document ID
13175590741950038262
Author
Mok K
Qi L
Vlooswijk A
Nanver L
Publication year
Publication venue
Solid-State Electronics

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Snippet

In this work, a double-layer Al metallization scheme for large-area photodiodes is presented. This scheme combines a self-alignment of two separate layers of sputtered Al with an anodic Al 2 O 3 as the intermediate insulating layer. One initial patterning step, that could be …
Continue reading at ris.utwente.nl (PDF) (other versions)

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