Nothing Special   »   [go: up one dir, main page]

Goossen et al., 1995 - Google Patents

GaAs MQW modulators integrated with silicon CMOS

Goossen et al., 1995

View PDF
Document ID
12782978613915102817
Author
Goossen K
Walker J
D'asaro L
Hui S
Tseng B
Leibenguth R
Kossives D
Bacon D
Dahringer D
Chirovsky L
Lentine A
Miller D
Publication year
Publication venue
IEEE Photonics Technology Letters

External Links

Snippet

We demonstrate integration of GaAs-AlGaAs multiple quantum well modulators to silicon CMOS circuitry via flip-chip solder-bonding followed by substrate removal. We obtain 95% device yield for 32/spl times/32 arrays of devices with 15 micron solder pads. We show …
Continue reading at ee.stanford.edu (PDF) (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1032III-V
    • H01L2924/10329Gallium arsenide [GaAs]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices

Similar Documents

Publication Publication Date Title
Goossen et al. GaAs MQW modulators integrated with silicon CMOS
US11742339B2 (en) Light-emitting diode display panel with micro lens array
Mathine The integration of III-V optoelectronics with silicon circuitry
Goossen et al. GaAs 850 nm modulators solder-bonded to silicon
US5244818A (en) Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits
US5286335A (en) Processes for lift-off and deposition of thin film materials
JP3520270B2 (en) Light emitting diode and method of manufacturing the same
US5280184A (en) Three dimensional integrated circuits with lift-off
US8611388B2 (en) Method and system for heterogeneous substrate bonding of waveguide receivers
Forrest Monolithic optoelectronic integration: A new component technology for lightwave communications
US20100025702A1 (en) Substrate-free flip chip light emitting diode
Chan et al. Grafted semiconductor optoelectronics
KR101158601B1 (en) Method for producing semiconductor chips using thin film technology and a semiconductor chip produced using thin-film technology
Matsuo et al. Novel technology for hybrid integration of photonic and electronic circuits
Nakahara et al. Hybrid integration of smart pixels by using polyimide bonding: demonstration of a GaAs pin photodiode/CMOS receiver
Pu et al. VCSELs bonded directly to foundry fabricated GaAs smart pixel arrays
Abdi et al. Research Toward Wafer-Scale 3D Integration of InP Membrane Photonics With InP Electronics
Grot et al. Integration of LED's and GaAs circuits by MBE regrowth
Miura et al. A monolithically integrated AlGaAs/GaAs pin/FET photoreceiver by MOCVD
JPH0774341A (en) Manufacture of optoelectronic integrated circuit
Kim et al. GaAlAs/GaAs integrated optoelectronic transmitter using selective MOCVD epitaxy and planar ion implantation
Jim et al. Fabrication of wafer level chip scale packaging for optoelectronic devices
Goossen et al. 4±4 array of GaAs hybrid-on-Si optoelectronic switching nodes operating at 250 Mbit/s
Goossen et al. Multiple attachment GaAs-on-Si hybrid optoelectronic/VLSI chips
JPH0740603B2 (en) Method for manufacturing semiconductor device