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Kopp et al., 2001 - Google Patents

Thermal analysis and considerations for Gallium Nitride Microwave power amplifier packaging.(Technical Feature).

Kopp et al., 2001

Document ID
12521287279373947421
Author
Kopp B
Billups A
Luesse M
Publication year
Publication venue
Microwave Journal

External Links

Snippet

Wide bandgap semiconductors can provide significantly higher power density than the 0.5 to 1.0 W/mm level typically achieved with gallium arsenide (GaAs). Small periphery silicon carbide (SiC) transistors, operating at 60 V, have demonstrated 4.3 W/mm power density, 9 …
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    • H01L23/367—Cooling facilitated by shape of device
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    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
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