Nothing Special   »   [go: up one dir, main page]

Chen et al., 2005 - Google Patents

An integrated CMOS low noise amplifier for 3-5 GHz UWB applications

Chen et al., 2005

View PDF
Document ID
1257421363018677915
Author
Chen S
Wang R
Kung M
Kuo H
Publication year
Publication venue
2005 IEEE Conference on Electron Devices and Solid-State Circuits

External Links

Snippet

For the ultra-wide-band communication applications, this work presents a two-stage topology to implement a low noise amplifier (LNA) based on the 0.18 um TSMC CMOS technology. We adopt the voltage-current resistor feedback and shunt-peaked circuit to …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45197—Pl types
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers

Similar Documents

Publication Publication Date Title
Hsu et al. Design of low power UWB LNA based on common source topology with current-reused technique
Fu et al. 3/spl sim/11-GHz CMOS UWB LNA using dual feedback for broadband matching
CN106712725A (en) Ultra wideband high-gain low noise amplifier based on monolithic microwave integrated circuit
Reja et al. An area-efficient multistage 3.0-to 8.5-GHz CMOS UWB LNA using tunable active inductors
Wan et al. Design of 3.1–10.6 GHz ultra-wideband CMOS low noise amplifier with current reuse technique
CN114793093B (en) Ultra-wideband protocol low-noise amplifier with anti-interference function
Meaamar et al. A 3–8 GHz low-noise CMOS amplifier
Chen et al. An integrated CMOS low noise amplifier for 3-5 GHz UWB applications
Singh et al. A 3–14 GHz, self-body biased common-gate UWB LNA for wireless applications in 90 nm CMOS
Doh et al. Design of CMOS UWB low noise amplifier with cascode feedback
Lee et al. CMOS LNA for full-band ultra-wideband systems using a simple wide input matching network
Wang et al. A high-gain CMOS LNA for 2.4/5.2-GHz WLAN applications
CN107623496A (en) A kind of wide-band microwave integrated low-noise amplifier with the resistive feedback of two-way
Ye et al. Wideband common-gate low-noise amplifier with dual-feedback for simultaneous input and noise matching
Wang et al. A CMOS 2-11 GHz Continuous Variable Gain UWB LNA
Hsu et al. Ultra-wide-band low noise amplifier using inductive feedback in 90-nm CMOS technology
Chen et al. An integrated CMOS low noise amplifier for ultra wide band applications
Luo et al. A 21-41 GHz Compact Wideband Low-Noise Amplifier Based on Transformer-Feedback Technique in 65-nm CMOS
Liu et al. Design of an ultra-wideband LNA using transformer matching method
Hsu et al. Systematic approaches of UWB low-power CMOS LNA with body biased technique
Jinhua et al. A 3-5GHz g m-Boosted Common-Gate CMOS UWB LNA with a Common-Source Auxiliary circuit
Karrari et al. A 3-11GHz current-reuse low noise amplifier for ultra-wideband recievers
Hsu et al. Design of dual-wideband low noise amplifier base on common gate topology
Weng et al. An ultra-wideband LNA with notch filter
Zhang et al. A novel high linearity and low power folded CMOS LNA for UWB receivers