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Li et al., 2022 - Google Patents

All silicon microdisplay fabricated utilizing 0.18 μm CMOS-IC with monolithic integration

Li et al., 2022

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Document ID
12474825152448978535
Author
Li Z
Zhu K
Huang X
Zhao J
Xu K
Publication year
Publication venue
IEEE Photonics Journal

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Snippet

A low voltage all silicon microdisplay is presented based on MOS-like gate-control all- Silicon light-emitting diode (LED) in standard 0.18 μm complementary metal oxide semiconductor (CMOS) technology. The MOS-like LED is designed under a PN alternate …
Continue reading at ieeexplore.ieee.org (PDF) (other versions)

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    • HELECTRICITY
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    • H01L29/76Unipolar devices, e.g. field effect transistors
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    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/778Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L33/08Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photo-luminescent region integrated within the semiconductor body
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