Mishra et al., 2023 - Google Patents
Acoustically assisted energy efficient field free spin orbit torque switching of out of plane nanomagnetMishra et al., 2023
- Document ID
- 12299973344350051261
- Author
- Mishra P
- Sravani M
- Narayana M
- Bhuktare S
- Publication year
- Publication venue
- Journal of Applied Physics
External Links
Snippet
Deterministic spin orbit torque (SOT) magnetization switching of the perpendicular magnetic anisotropy structures requires an external magnetic field, which is unsuitable for on-chip applications. Various approaches are there to debar the external magnetic field requirement …
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L43/02—Details
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L43/08—Magnetic-field-controlled resistors
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Han et al. | Spin-orbit torques: Materials, physics, and devices | |
Yang et al. | Acoustic control of magnetism toward energy-efficient applications | |
Zhang et al. | Perpendicular-magnetic-anisotropy CoFeB racetrack memory | |
Suzuki et al. | Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire | |
Biswas et al. | Complete magnetization reversal in a magnetostrictive nanomagnet with voltage-generated stress: A reliable energy-efficient non-volatile magneto-elastic memory | |
US9460769B2 (en) | Electric field ferromagnetic resonance excitation method and magnetic function element employing same | |
Diao et al. | Spin transfer switching in dual MgO magnetic tunnel junctions | |
Hu et al. | Electric-field control of strain-mediated magnetoelectric random access memory | |
Tiercelin et al. | Room temperature magnetoelectric memory cell using stress-mediated magnetoelastic switching in nanostructured multilayers | |
Biswas et al. | Acoustically assisted spin-transfer-torque switching of nanomagnets: An energy-efficient hybrid writing scheme for non-volatile memory | |
Chen et al. | Electrically controlled magnetization switching in a multiferroic heterostructure | |
Khan et al. | Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory | |
Dusch et al. | Stress-mediated magnetoelectric memory effect with uni-axial TbCo2/FeCo multilayer on 011-cut PMN-PT ferroelectric relaxor | |
Van de Wiele et al. | Electric field driven magnetic domain wall motion in ferromagnetic-ferroelectric heterostructures | |
Wilczyński et al. | Free-electron model of current-induced spin-transfer torque in magnetic tunnel junctions | |
Yen et al. | Reduction in critical current density for spin torque transfer switching with composite free layer | |
Ma et al. | Effect of magnetic domain structure on longitudinal and transverse magnetoelectric response of particulate magnetostrictive-piezoelectric composites | |
Yang et al. | Electric field control of magnetism in FePd/PMN-PT heterostructure for magnetoelectric memory devices | |
Cui et al. | Voltage pulse induced repeated magnetization reversal in strain-mediated multiferroic nanomagnets: A size-and material-dependent micromagnetic study | |
Roe et al. | Resonant acoustic wave assisted spin-transfer-torque switching of nanomagnets | |
Stöhr et al. | Magnetization switching without charge or spin currents | |
Zhang et al. | Current induced perpendicular-magnetic-anisotropy racetrack memory with magnetic field assistance | |
Mishra et al. | Acoustically assisted energy efficient field free spin orbit torque switching of out of plane nanomagnet | |
Li et al. | Field-free switching model of spin–orbit torque (SOT)-MTJ device with thermal effect based on voltage-controlled magnetic anisotropy (VCMA) | |
Sampaio et al. | Time-resolved observation of fast domain-walls driven by vertical spin currents in short tracks |