Nothing Special   »   [go: up one dir, main page]

Amri et al., 2016 - Google Patents

Effect of acid vapor etching on morphological and opto-electric properties of flat silicon and silicon nanowire arrays: A comparative study

Amri et al., 2016

Document ID
12298856090450045992
Author
Amri C
Ouertani R
Hamdi A
Ezzaouia H
Publication year
Publication venue
Superlattices and Microstructures

External Links

Snippet

In this paper, we report a comparative study between porous silicon (pSi) and porous silicon nanowires (pSiNWs). Acid Vapor Etching (AVE) treatment has been used to perform porous structure on flat Si and SiNWs array substrates respectively. SiNW structure is prepared by …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N2021/653—Coherent methods [CARS]
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies

Similar Documents

Publication Publication Date Title
Rahman et al. Passivation of all-angle black surfaces for silicon solar cells
Pan et al. Nanocracking and metallization doubly defined large-scale 3D plasmonic sub-10 nm-gap arrays as extremely sensitive SERS substrates
Lajvardi et al. Structural and optical properties of silicon nanowires synthesized by Ag-assisted chemical etching
Amri et al. Effect of acid vapor etching on morphological and opto-electric properties of flat silicon and silicon nanowire arrays: A comparative study
Gonchar et al. Optical properties of silicon nanowires fabricated by environment-friendly chemistry
Sun et al. A white-emitting ZnO–Au nanocomposite and its SERS applications
Kanidi et al. Surface-enhanced Raman spectroscopy of graphene integrated in plasmonic silicon platforms with three-dimensional nanotopography
Lam et al. N-type silicon nanowires prepared by silver metal-assisted chemical etching: Fabrication and optical properties
Timoshenko et al. Photoluminescence and Raman scattering in arrays of silicon nanowires
Saxena et al. Role of metal nanoparticles on porosification of silicon by metal induced etching (MIE)
Ashrafabadi et al. Single-crystalline Si nanowires fabrication by one-step metal assisted chemical etching: The effect of etching time and resistivity of Si wafer
Amri et al. Effect of porous layer engineered with acid vapor etching on optical properties of solid silicon nanowire arrays
Gonchar et al. Structural and optical properties of silicon nanowire arrays fabricated by metal assisted chemical etching with ammonium fluoride
Salem et al. Novel Si nanostructures via Ag-assisted chemical etching route on single and polycrystalline substrates
Jin et al. Enhancing the SERS performance of semiconductor nanostructures through a facile surface engineering strategy
Lajvardi et al. Effects of silver and gold catalytic activities on the structural and optical properties of silicon nanowires
Yogi et al. Porous Silicon's fractal nature revisited
Kashyap et al. Analysis of synthesized doped vertical silicon nanowire arrays for effective sensing of nitrogen dioxide: as gas sensors
Gonchar et al. Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers
Nien et al. Far-field and near-field monitoring of hybridized optical modes from Au nanoprisms suspended on a graphene/Si nanopillar array
Oda et al. Correlation between photoluminescence and structure in silicon nanowires fabricated by metal‐assisted etching
Guerrero et al. Plasmonic-enhanced photoluminescence in porous silicon with pore-embedded gold nanoparticles fabricated by direct reduction of chloroauric acid
Rasheed et al. Surface reconstruction of silicon and polysilicon by Nd: YAG laser etching: SEM, Raman and PL studies
Hung et al. Realization and characterization of aligned silicon nanowire array with thin silver film
Tingzon et al. Terahertz emission and photoluminescence of silicon nanowires electrolessly etched on the surface of silicon (100),(110), and (111) substrates for photovoltaic cell applications