Nothing Special   »   [go: up one dir, main page]

Tortonese et al., 2004 - Google Patents

Sub-50-nm isolated line and trench width artifacts for CD metrology

Tortonese et al., 2004

View PDF
Document ID
1200823850026104500
Author
Tortonese M
Lorusso G
Blanquies R
Prochazka J
Grella L
Publication year
Publication venue
Metrology, Inspection, and Process Control for Microlithography XVIII

External Links

Snippet

We present a technique to produce isolated lines and trenches with arbitrary widths in the range of 12 nm to 500 nm, arbitrary heights and depths in the range of 100 nm to 2 μm, 90- degree sidewall angle, and top corner radii as small as 5 nm. These structures are ideal …
Continue reading at www.vlsistandards.com (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details

Similar Documents

Publication Publication Date Title
US7576317B1 (en) Calibration standard for a dual beam (FIB/SEM) machine
US6218264B1 (en) Method of producing a calibration standard for 2-D and 3-D profilometry in the sub-nanometer range
JP3266451B2 (en) Calibration standard for profilometer, manufacturing method and measuring method
US10126326B2 (en) Atomic force microscopy of scanning and image processing
Dixson et al. Traceable calibration of critical-dimension atomic force microscope linewidth measurements with nanometer uncertainty
US7612334B2 (en) Standard reference component for calibration, fabrication method for the same, and scanning electron microscope using the same
Tortonese et al. Sub-50-nm isolated line and trench width artifacts for CD metrology
JP2007218711A (en) Method for measuring measurement target pattern using electron microscope device
US20110133065A1 (en) Standard Member for Correction, Scanning Electron Microscope Using Same, and Scanning Electron Microscope Correction Method
EP0720216B1 (en) Linewidth metrology of integrated circuit structures
Cresswell et al. RM 8111: Development of a prototype linewidth standard
US6358860B1 (en) Line width calibration standard manufacturing and certifying method
US9646804B2 (en) Method for calibration of a CD-SEM characterisation technique
Kizu et al. Line edge roughness measurement on vertical sidewall for reference metrology using a metrological tilting atomic force microscope
CN116659427A (en) Standard sample, calibration device and calibration method of critical dimension scanning electron microscope
US7361941B1 (en) Calibration standards and methods
Novikov Test Object for SEM Calibration: 2. Correlation Analysis of SEM Signals
Zhang et al. Addressing FinFET metrology challenges in 1× node using tilt-beam critical dimension scanning electron microscope
Kizu et al. Accurate vertical sidewall measurement by a metrological tilting-AFM for reference metrology of line edge roughness
Cordes et al. Sidewall slope sensitivity of critical dimension atomic force microscopy
Zandiatashbar et al. High-throughput automatic defect review for 300mm blank wafers with atomic force microscope
KR102263564B1 (en) Method for calibrating nano measurement scale and standard material used therein
Gin et al. Inline metrology of high aspect ratio hole tilt using small-angle x-ray scattering
US20180340769A1 (en) Three dimensional structure fabrication control using novel processing system
Huebner et al. A nanoscale linewidth/pitch standard for high-resolution optical microscopy and other microscopic techniques