Nothing Special   »   [go: up one dir, main page]

Moriyama et al., 2020 - Google Patents

Time-dependent measurement of charge density on the bottom of high aspect capillary hole in pulse-modulated VHF capacitively coupled Ar plasma

Moriyama et al., 2020

Document ID
11796414640271907355
Author
Moriyama M
Nakahara N
Kurihara K
Iino D
Fukumizu H
Suzuki H
Toyoda H
Publication year
Publication venue
Japanese Journal of Applied Physics

External Links

Snippet

Charging and discharging behavior of high aspect-ratio (AR) hole capillary plate (CP) exposed to a pulse-modulated very high frequency (VHF) capacitively-coupled plasma is investigated. From an equivalent circuit model, time-dependent charge density on the …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometer or separator tubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Similar Documents

Publication Publication Date Title
Chen et al. Lecture notes on principles of plasma processing
Ventzek et al. Two‐dimensional hybrid model of inductively coupled plasma sources for etching
Walton et al. Electron beam generated plasmas for ultra low Te processing
Delattre et al. Radio-frequency capacitively coupled plasmas excited by tailored voltage waveforms: comparison of experiment and particle-in-cell simulations
Lafleur et al. Alternate extraction and acceleration of positive and negative ions from a gridded plasma source
Logue et al. Ion energy distributions in inductively coupled plasmas having a biased boundary electrode
Liu et al. Fundamental study towards a better understanding of low pressure radio-frequency plasmas for industrial applications
Ahmad et al. Negative-ion surface production in hydrogen plasmas: modeling of negative-ion energy distribution functions and comparison with experiments
Moriyama et al. Time-dependent measurement of charge density on the bottom of high aspect capillary hole in pulse-modulated VHF capacitively coupled Ar plasma
Hirata et al. On-wafer monitoring and control of ion energy distribution for damage minimization in atomic layer etching processes
Moriyama et al. Evaluation of absolute charge density at the bottom of high aspect capillary holes exposed to a pulsed very high frequency plasma
Soni et al. Experimental and numerical characterization of a radio-frequency plasma source with a DC-grounded electrode configuration using a quarter-wavelength filter
Zhang et al. Fluid simulation of the phase-shift effect in Ar/CF4 capacitively coupled plasmas
Marinov et al. Extraction and neutralization of positive and negative ions from a pulsed electronegative inductively coupled plasma
Mishra et al. Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge
Zhang et al. Development of a helicon-wave excited plasma facility with high magnetic field for plasma–wall interactions studies
Zotovich et al. Experimental study of transition from electron beam to rf-power-controlled plasma in DFCCP in argon with additional ionization by an electron beam
Saito et al. Silicon wafer etching by pulsed high-power inductively coupled Ar/CF4 plasma with 150 kHz band frequency
Zhang et al. Effects of RF bias frequency and power on the plasma parameters and ash rate in a remote plasma source
Agarwal et al. Modeling of low pressure plasma sources for microelectronics fabrication
Takagi et al. Estimations of secondary electron emission coefficients of Si, SiO2, and polyimide electrodes in dual-frequency capacitively coupled discharge
Zhang et al. Modeling of plasma density, argon ion energy and ion velocity functions in a dipolar electron cyclotron resonance plasma source
Le Coeur et al. Distributed electron cyclotron resonance plasma immersion for large area ion implantation
Cha et al. Two-dimensional fluid simulation of pulsed-power inductively coupled Ar/H2 discharge
Bogdanova et al. Effect of an electron beam on a dual-frequency capacitive rf plasma: experiment and simulation