Campanella et al., 2009 - Google Patents
High-frequency sensor technologies for inertial force detection based on thin-film bulk acoustic wave resonators (FBAR)Campanella et al., 2009
View PDF- Document ID
- 11608995777333993556
- Author
- Campanella H
- Plaza J
- Montserrat J
- Uranga A
- Esteve J
- Publication year
- Publication venue
- Microelectronic Engineering
External Links
Snippet
High-frequency technologies and fabrication processes intended for inertial force detection have been developed. The sensing devices are based on longitudinal-mode thin-film bulk acoustic wave resonators (FBAR) monolithically integrated with silicon (Si) technologies …
- 238000001514 detection method 0 title abstract description 14
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on micro-sensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties, e.g. capacitance or reluctance
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wang et al. | A MEMS piezoelectric in-plane resonant accelerometer based on aluminum nitride with two-stage microleverage mechanism | |
| Wang et al. | A mass sensor based on 3-DOF mode localized coupled resonator under atmospheric pressure | |
| Defay et al. | PZT thin films integration for the realisation of a high sensitivity pressure microsensor based on a vibrating membrane | |
| Ali et al. | Electrical characterization of piezoelectric-on-silicon contour mode resonators fully immersed in liquid | |
| CN107063839A (en) | The mechanics parameter measuring method and device of multi-layer compound film structure | |
| Wood et al. | Mass sensor utilising the mode-localisation effect in an electrostatically-coupled MEMS resonator pair fabricated using an SOI process | |
| Prasad et al. | Simultaneous interrogation of high-Q modes in a piezoelectric-on-silicon micromechanical resonator | |
| Campanella et al. | High-frequency sensor technologies for inertial force detection based on thin-film bulk acoustic wave resonators (FBAR) | |
| Bhaswara et al. | Fabrication of nanoplate resonating structures via micro-masonry | |
| Li et al. | A micro-machined differential resonance accelerometer based on silicon on quartz method | |
| Krakover et al. | Micromechanical resonant cantilever sensors actuated by fringing electrostatic fields | |
| Huang et al. | Determination of piezoelectric coefficients and elastic constant of thin films by laser scanning vibrometry techniques | |
| Yu et al. | Length-extensional resonating gas sensors with IC-foundry compatible low-cost fabrication in non-SOI single-wafer | |
| Aditi et al. | Fabrication of MEMS xylophone magnetometer by anodic bonding technique using SOI wafer | |
| Ryder et al. | AFM characterization of out-of-plane high frequency microresonators | |
| Wang et al. | Towards a hybrid mass sensing system by combining a qcm mass sensor with a 3-dof mode localized coupled resonator stiffness sensor | |
| Dai et al. | A resonant method for determining mechanical properties of Si3N4 and SiO2 thin films | |
| Teva et al. | A femtogram resolution mass sensor platform, based on SOI electrostatically driven resonant cantilever. Part I: Electromechanical model and parameter extraction | |
| Zhang et al. | Fabrication and evaluation of aluminum nitride based MEMS piezoelectric vibration sensors for large-amplitude vibration applications | |
| Chen et al. | Performances and improvement of coupled dual-microcantilevers in sensitivity | |
| Mouro et al. | Electrical characterization of thin-film silicon flexural resonators in linear and nonlinear regimes of motion for integration with electronics | |
| Moczała et al. | Technology of thermally driven and magnetomotively detected MEMS microbridges | |
| Mastropaolo et al. | Piezo-electrically actuated and sensed silicon carbide ring resonators | |
| Prasad et al. | Micromechanical piezoelectric-on-silicon BAW resonators for sensing in liquid environments | |
| Herth et al. | Detection of out-of-plane and in-plane (XYZ) motions of piezoelectric microcantilever by 3D-Laser Doppler Vibrometry |